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TSM3424CX6-RF-VB Product details

Product introduction:

## 1. Product Introduction

### Model: TSM3424CX6-RF-VB
**Brand: VBsemi**

TSM3424CX6-RF-VB is a high-performance N-Channel MOSFET produced by VBsemi in a compact SOT23-6 package. The device is designed for an operating voltage of 30V, a maximum drain current of 6A, and an on-resistance of 30mΩ at a VGS of 10V. With its low on-resistance and fast switching characteristics, the TSM3424CX6-RF-VB is ideal for space-constrained applications that require high efficiency, such as portable electronic devices, power management, and load switching.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-N 30V 1.7V 6A 27(mΩ) 26(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-N 30V 1.7V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-N 30V 1.7V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-N
## 2. Detailed parameter description

- **Type**: N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum drain current (ID)**: 6A
- **On-resistance (RDS(ON))**: 30mΩ @ VGS=10V
- **Gate-source voltage (VGS)**: ±±20V
- **Threshold voltage (Vth)**: 1.2V
- **Package**: SOT23-6
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (junction to ambient)**: 83°C/W
- **Maximum pulsed drain current (IDM)**: 24A

Domain and module applications:

## III. Applications and module examples

### 1. Portable electronic devices
TSM3424CX6-RF-VB MOSFET is particularly suitable for power management modules in portable electronic devices. For example, in smartphones, tablets and portable music players, the device can be used in battery management systems and power switches to ensure that the device operates efficiently in low-power modes and prolong battery life.

### 2. Power management
In power management applications, TSM3424CX6-RF-VB can be used in switching power modules such as buck converters and boost converters. Its low on-resistance and high switching speed characteristics help improve power conversion efficiency and reduce heat loss, thereby optimizing the performance of the power management system.

### 3. Load switch
This MOSFET is also very suitable for load switch applications, such as power distribution and control modules in laptops and desktops. Its fast switching capability enables it to efficiently control the on and off of different loads, ensuring that the system can operate stably in various operating modes.

### 4. Communication equipment
In communication equipment, TSM3424CX6-RF-VB MOSFET can be used in modules such as radio frequency (RF) amplifiers and antenna switches. Its high performance and small package characteristics enable it to provide excellent performance in high-frequency applications, supporting the miniaturization and high-performance requirements of communication equipment.

### 5. Automotive electronics
Although TSM3424CX6-RF-VB MOSFET is mainly designed for low-voltage applications, it still has certain application potential in certain automotive electronics fields. For example, in in-vehicle infotainment systems and low-power electric devices, this MOSFET can be used in power management and control modules to ensure reliable operation of the system in various vehicle environments.

Through the above examples, TSM3424CX6-RF-VB MOSFET has a wide range of applications in multiple fields and modules. Its high performance, small package and reliability make it an ideal choice for a variety of applications, especially in environments where high performance is required and space is limited.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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