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SI3464DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3464DV-T1-GE3-VB is an N-Channel MOSFET produced by VBsemi. It is a high-performance, low-voltage, low on-resistance MOSFET suitable for a variety of low-to-medium power circuit designs, such as power management, switching, and drive circuits.
**Detailed parameter description:**
1. **Rated voltage (VDS):** The rated voltage of 30V makes this MOSFET suitable for low-to-medium power circuit designs, such as power management and switching circuits.
2. **Rated current (ID):** The rated current of 6A indicates that it can handle medium-power loads and is suitable for a variety of power management and drive circuits.
3. **On-resistance (RDS(ON)):** At a gate-source voltage of 10V, the on-resistance is 30mΩ, which indicates that the device will produce low power losses in the on state.
4. **Threshold voltage (Vth):** The threshold voltage is 1.2V, making the device easy to control and suitable for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**VBsemi N-Channel MOSFET SI3464DV-T1-GE3-VB**
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Parameters:**
- N—Channel
- Rated voltage: 30V
- Rated current: 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Threshold voltage (Vth): 1.2V
- **Package:** SOT23-6
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Parameters:**
- N—Channel
- Rated voltage: 30V
- Rated current: 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Threshold voltage (Vth): 1.2V
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** Can be used for DC-DC converters, battery management systems and load switches, etc.
2. **Driver:** Suitable for motor drivers, LED drivers and fan drivers, etc.
3. **Switching circuit:** Used in circuit designs such as switching modules, voltage regulators and power inverters.
In summary, SI3464DV-T1-GE3-VB is a high-performance, reliable N-Channel MOSFET suitable for a variety of low to medium power power management, switching and drive circuit applications.
1. **Power management:** Can be used for DC-DC converters, battery management systems and load switches, etc.
2. **Driver:** Suitable for motor drivers, LED drivers and fan drivers, etc.
3. **Switching circuit:** Used in circuit designs such as switching modules, voltage regulators and power inverters.
In summary, SI3464DV-T1-GE3-VB is a high-performance, reliable N-Channel MOSFET suitable for a variety of low to medium power power management, switching and drive circuit applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
