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SI3460DV-T1-GE3-VB Product details
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The following is the product information of SI3460DV-T1-GE3-VB:
### Product Introduction
SI3460DV-T1-GE3-VB is an N-Channel trench power MOSFET produced by VBsemi brand, using SOT23-6 package. It has low on-resistance, high current carrying capacity and excellent voltage control characteristics, suitable for various low-voltage, high-current power management and switching circuit designs.
### Product Introduction
SI3460DV-T1-GE3-VB is an N-Channel trench power MOSFET produced by VBsemi brand, using SOT23-6 package. It has low on-resistance, high current carrying capacity and excellent voltage control characteristics, suitable for various low-voltage, high-current power management and switching circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
### Detailed parameter description
- **Voltage rating (VDS):** 30V
- **Current rating (ID):** 6A
- **On-resistance (RDS(ON)):** 30mΩ @ VGS = 10V
- **Threshold voltage (Vth):** 1.2V
- **Maximum gate-source voltage (VGS(max)):** ±±20V
- **Voltage rating (VDS):** 30V
- **Current rating (ID):** 6A
- **On-resistance (RDS(ON)):** 30mΩ @ VGS = 10V
- **Threshold voltage (Vth):** 1.2V
- **Maximum gate-source voltage (VGS(max)):** ±±20V
Domain and module applications：
### Application fields and module examples
1. **Power management:** SI3460DV-T1-GE3-VB can be used in power management modules such as power switches, DC-DC converters and regulators, and is suitable for portable electronic products, wireless communication equipment and industrial control systems.
2. **Motor drive:** In motor drivers and motor control modules, SI3460DV-T1-GE3-VB can be used as drivers for DC motors, stepper motors and brushless motors, and is suitable for home appliances, automotive electronics and robotics.
3. **LED lighting:** Used in LED drivers and lighting control systems, SI3460DV-T1-GE3-VB can realize the drive control of LED light strips, car lights and outdoor lighting, providing high-efficiency lighting solutions.
4. **Battery protection:** Suitable for lithium battery components and battery protection circuit design, SI3460DV-T1-GE3-VB can realize battery charge and discharge control and protection functions, and improve the safety and reliability of battery components.
5. **Power amplifier:** In power amplifier and audio amplifier circuits, SI3460DV-T1-GE3-VB can be used as an output stage power tube to achieve high-fidelity audio amplification and power drive functions.
In summary, SI3460DV-T1-GE3-VB is suitable for a variety of applications that require N-Channel trench power MOSFETs, including power management, motor drive, LED lighting, battery protection, and power amplifiers.
1. **Power management:** SI3460DV-T1-GE3-VB can be used in power management modules such as power switches, DC-DC converters and regulators, and is suitable for portable electronic products, wireless communication equipment and industrial control systems.
2. **Motor drive:** In motor drivers and motor control modules, SI3460DV-T1-GE3-VB can be used as drivers for DC motors, stepper motors and brushless motors, and is suitable for home appliances, automotive electronics and robotics.
3. **LED lighting:** Used in LED drivers and lighting control systems, SI3460DV-T1-GE3-VB can realize the drive control of LED light strips, car lights and outdoor lighting, providing high-efficiency lighting solutions.
4. **Battery protection:** Suitable for lithium battery components and battery protection circuit design, SI3460DV-T1-GE3-VB can realize battery charge and discharge control and protection functions, and improve the safety and reliability of battery components.
5. **Power amplifier:** In power amplifier and audio amplifier circuits, SI3460DV-T1-GE3-VB can be used as an output stage power tube to achieve high-fidelity audio amplification and power drive functions.
In summary, SI3460DV-T1-GE3-VB is suitable for a variety of applications that require N-Channel trench power MOSFETs, including power management, motor drive, LED lighting, battery protection, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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