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SI3442BDV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3442BDV-T1-GE3-VB is a VBsemi brand N-channel field effect transistor with a single N-channel. This transistor is suitable for low voltage, medium current electronic applications. It adopts SOT23-6 package and is compact, suitable for small circuit board applications. It has a drain-source voltage withstand capability of 30V and a drain current withstand capability of 6A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 30mΩ and the threshold voltage (Vth) is 1.2V.
SI3442BDV-T1-GE3-VB is a VBsemi brand N-channel field effect transistor with a single N-channel. This transistor is suitable for low voltage, medium current electronic applications. It adopts SOT23-6 package and is compact, suitable for small circuit board applications. It has a drain-source voltage withstand capability of 30V and a drain current withstand capability of 6A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 30mΩ and the threshold voltage (Vth) is 1.2V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**Detailed parameter description:**
- Voltage withstand capacity: 30V
- Drain current withstand capacity: 6A
- On-resistance (RDS(ON)):
- When VGS=10V: 30mΩ
-
--When VGS=±20V: 30mΩ
- Threshold voltage (Vth): 1.2V
- Package type: SOT23-6
- Brand: VBsemi
- Voltage withstand capacity: 30V
- Drain current withstand capacity: 6A
- On-resistance (RDS(ON)):
- When VGS=10V: 30mΩ
-
--When VGS=±20V: 30mΩ
- Threshold voltage (Vth): 1.2V
- Package type: SOT23-6
- Brand: VBsemi
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** SI3442BDV-T1-GE3-VB can be used in low voltage power management circuits, such as regulators, DC-DC converters, etc. Its low on-resistance and low threshold voltage give it good performance in low voltage applications.
2. **Battery protection:** In battery management circuits, the battery needs to be charged and discharged and protected. SI3442BDV-T1-GE3-VB can be used as a switching element in a battery protection circuit to achieve battery charge and discharge control and protection.
3. **Motor drive:** In small motor drive circuits, the motor needs to be precisely controlled. SI3442BDV-T1-GE3-VB can be used as a power switching element in a motor drive circuit to achieve efficient control and regulation of the motor.
4. **LED drive:** In LED lighting applications, precise current control of the LED is required. SI3442BDV-T1-GE3-VB can be used as a switching element in the LED drive circuit to achieve efficient control and regulation of the LED.
Through the above examples, it can be seen that the SI3442BDV-T1-GE3-VB transistor has broad application prospects in power management, battery protection, motor drive and LED drive, and can improve the energy efficiency and stability of the system.
1. **Power management:** SI3442BDV-T1-GE3-VB can be used in low voltage power management circuits, such as regulators, DC-DC converters, etc. Its low on-resistance and low threshold voltage give it good performance in low voltage applications.
2. **Battery protection:** In battery management circuits, the battery needs to be charged and discharged and protected. SI3442BDV-T1-GE3-VB can be used as a switching element in a battery protection circuit to achieve battery charge and discharge control and protection.
3. **Motor drive:** In small motor drive circuits, the motor needs to be precisely controlled. SI3442BDV-T1-GE3-VB can be used as a power switching element in a motor drive circuit to achieve efficient control and regulation of the motor.
4. **LED drive:** In LED lighting applications, precise current control of the LED is required. SI3442BDV-T1-GE3-VB can be used as a switching element in the LED drive circuit to achieve efficient control and regulation of the LED.
Through the above examples, it can be seen that the SI3442BDV-T1-GE3-VB transistor has broad application prospects in power management, battery protection, motor drive and LED drive, and can improve the energy efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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