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SI3442BDV-T1-E3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3442BDV-T1-E3-VB is an N-Channel MOSFET launched by VBsemi, which has low on-resistance and high current characteristics. It is suitable for a variety of low to medium power power management, driver and switching circuit applications.
**Detailed parameter description:**
1. **Rated voltage (VDS):** The rated voltage of 30V makes this MOSFET suitable for medium and low voltage circuit design, such as power management and low voltage switching circuits.
2. **Rated current (ID):** The rated current of 6A indicates that it can handle medium power loads and is suitable for most low to medium power circuits.
3. **On-resistance (RDS(ON)):** At a gate-source voltage of 10V, the on-resistance is 30mΩ, which means that the device will produce lower power loss in the on state.
4. **Threshold voltage (Vth):** The threshold voltage is 1.2V, which makes the device easy to control and suitable for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**VBsemi N-Channel MOSFET SI3442BDV-T1-E3-VB**
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Parameters:**
- N-Channel channel
- Rated voltage: 30V
- Rated current: 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Threshold voltage (Vth): 1.2V
- **Package:** SOT23-6
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Parameters:**
- N-Channel channel
- Rated voltage: 30V
- Rated current: 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Threshold voltage (Vth): 1.2V
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** Can be used for low-voltage power management modules such as DC-DC converters, regulators and switching modules.
2. **Driver:** Circuits used to drive various loads, such as motor drivers, LED drivers and fan drivers.
3. **Switching circuit:** Used in various switching circuit designs, such as switching power supplies, electronic switches and inverters.
In summary, SI3442BDV-T1-E3-VB is a reliable N-Channel MOSFET suitable for a variety of low to medium power power management, driver and switching circuit applications.
1. **Power management:** Can be used for low-voltage power management modules such as DC-DC converters, regulators and switching modules.
2. **Driver:** Circuits used to drive various loads, such as motor drivers, LED drivers and fan drivers.
3. **Switching circuit:** Used in various switching circuit designs, such as switching power supplies, electronic switches and inverters.
In summary, SI3442BDV-T1-E3-VB is a reliable N-Channel MOSFET suitable for a variety of low to medium power power management, driver and switching circuit applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
