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RTQ020N03TR-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
RTQ020N03TR-VB is a VBsemi brand N-Channel trench MOSFET with a rated voltage of 30V and a rated current of 6A. At a gate voltage of 10V, its on-resistance is 30mΩ. The device is packaged in SOT23-6 and is suitable for a variety of low-power applications.
RTQ020N03TR-VB is suitable for various modules and devices in the fields of mobile device charging management, LED lighting, power management and analog switches, especially for application scenarios with strict requirements on size and power consumption.
RTQ020N03TR-VB is a VBsemi brand N-Channel trench MOSFET with a rated voltage of 30V and a rated current of 6A. At a gate voltage of 10V, its on-resistance is 30mΩ. The device is packaged in SOT23-6 and is suitable for a variety of low-power applications.
RTQ020N03TR-VB is suitable for various modules and devices in the fields of mobile device charging management, LED lighting, power management and analog switches, especially for application scenarios with strict requirements on size and power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**Detailed parameter description:**
- Channel type: N-Channel
- Rated voltage (VDS): 30V
- Rated current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Gate voltage (VGS): ±20V
- Gate threshold voltage (Vth): 1.2V
- Package type: SOT23-6
- Channel type: N-Channel
- Rated voltage (VDS): 30V
- Rated current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V
- Gate voltage (VGS): ±20V
- Gate threshold voltage (Vth): 1.2V
- Package type: SOT23-6
Domain and module applications：
**Application fields and modules:**
1. **Mobile device charging management**: Due to its small package and low on-resistance, RTQ020N03TR-VB can be used in battery charging management modules for mobile devices such as smartphones, tablets and portable chargers.
2. **LED lighting**: In LED drivers, this low-voltage, low-power MOSFET can be used for current control and power management to improve the efficiency and stability of LED lighting systems.
3. **Power management**: It can be used in modules such as low-power DC-DC converters, regulators and switching power supplies to provide stable power for various electronic devices.
4. **Analog switch**: Due to its low on-resistance and low turn-on voltage, it can be used in analog switching circuits such as audio amplifiers and signal switches to improve the efficiency and fidelity of signal transmission.
1. **Mobile device charging management**: Due to its small package and low on-resistance, RTQ020N03TR-VB can be used in battery charging management modules for mobile devices such as smartphones, tablets and portable chargers.
2. **LED lighting**: In LED drivers, this low-voltage, low-power MOSFET can be used for current control and power management to improve the efficiency and stability of LED lighting systems.
3. **Power management**: It can be used in modules such as low-power DC-DC converters, regulators and switching power supplies to provide stable power for various electronic devices.
4. **Analog switch**: Due to its low on-resistance and low turn-on voltage, it can be used in analog switching circuits such as audio amplifiers and signal switches to improve the efficiency and fidelity of signal transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
