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QM3002V-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model:** QM3002V-VB
**Silkscreen:** VB7322
**Brand:** VBsemi
**Product Description:** QM3002V-VB is an N-channel MOSFET device produced by VBsemi, with a maximum drain-source voltage (Vds) of 30V and a maximum continuous drain current (Id) of 6A. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ when the gate-source voltage (Vgs) is 10V. Its gate threshold voltage (Vth) is 1.2V, and the maximum gate-source voltage (Vgs) can reach ±20V. QM3002V-VB adopts SOT23-6 package, which has a small size and excellent heat dissipation performance, and is suitable for a variety of applications.
**Model:** QM3002V-VB
**Silkscreen:** VB7322
**Brand:** VBsemi
**Product Description:** QM3002V-VB is an N-channel MOSFET device produced by VBsemi, with a maximum drain-source voltage (Vds) of 30V and a maximum continuous drain current (Id) of 6A. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ when the gate-source voltage (Vgs) is 10V. Its gate threshold voltage (Vth) is 1.2V, and the maximum gate-source voltage (Vgs) can reach ±20V. QM3002V-VB adopts SOT23-6 package, which has a small size and excellent heat dissipation performance, and is suitable for a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
### Detailed parameter description
- **Model:** QM3002V-VB
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Polarity:** N-channel
- **Maximum drain-source voltage (Vds):** 30V
- **Maximum continuous drain current (Id):** 6A
- **On-resistance (RDS(ON)):** 30mΩ (Vgs = 10V)
- **Gate threshold voltage (Vth):** 1.2V
- **Maximum gate-source voltage (Vgs):** ±20V
- **Package type:** SOT23-6
- **Operating temperature range:** -55°C ~ 150°C
- **Power dissipation (Pd):** 2.5W
- **Input capacitance (Ciss):** 600pF (typical)
- **Output capacitance (Coss):** 80pF (typical)
- **Reverse transfer capacitance (Crss):** 30pF (typical)
- **Switching time:**
- Turn on time (ton): 10ns
- Turn off time (toff): 20ns
- **Model:** QM3002V-VB
- **Silkscreen:** VB7322
- **Brand:** VBsemi
- **Polarity:** N-channel
- **Maximum drain-source voltage (Vds):** 30V
- **Maximum continuous drain current (Id):** 6A
- **On-resistance (RDS(ON)):** 30mΩ (Vgs = 10V)
- **Gate threshold voltage (Vth):** 1.2V
- **Maximum gate-source voltage (Vgs):** ±20V
- **Package type:** SOT23-6
- **Operating temperature range:** -55°C ~ 150°C
- **Power dissipation (Pd):** 2.5W
- **Input capacitance (Ciss):** 600pF (typical)
- **Output capacitance (Coss):** 80pF (typical)
- **Reverse transfer capacitance (Crss):** 30pF (typical)
- **Switching time:**
- Turn on time (ton): 10ns
- Turn off time (toff): 20ns
Domain and module applications：
### Applications and Modules
QM3002V-VB N-channel MOSFET is suitable for a variety of applications due to its low on-resistance and fast switching characteristics. Here are some specific examples:
1. **Power Management Module:** In switch mode power supplies (SMPS), QM3002V-VB is often used in synchronous rectification and DC-DC converters to improve efficiency and reduce power consumption. For example, in a step-down (buck) converter, the MOSFET can be used as the main switch to control the output voltage.
2. **Motor Drive:** Due to its high current handling capability, QM3002V-VB is suitable for small motor drive circuits. It can be used in brushless DC motor (BLDC) drives to help achieve precise speed control and efficient motor operation.
3. **Load Switch:** In portable devices, this MOSFET can be used as a load switch to control the power switching of various subsystems, such as mobile phones, tablets, and portable medical devices, thereby extending battery life.
4. **LED driver:** QM3002V-VB can also be used in LED driver circuits to provide stable current to drive LED lamps, improving brightness and life. Especially in LED backlight and lighting applications, this MOSFET can provide efficient current control.
5. **Communication equipment:** In wireless communication modules, such as Wi-Fi and Bluetooth modules, this MOSFET can be used for power management in radio frequency (RF) circuits to ensure stable signal transmission and reception performance.
Through the above examples, it can be seen that QM3002V-VB has a wide range of applications in various electronic devices and systems, and can provide design engineers with efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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