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MIS6418-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
MIS6418-VB is an N-Channel power field effect transistor produced by VBsemi with the following characteristics:
- Load operating voltage: 30V
- Maximum drain current: 6A
- Static drain-source resistance: 30mΩ @ VGS=10V
- Static drain-source resistance: 30mΩ @
--VGS=±20V
- Gate threshold voltage: 1.2V
The characteristics of MIS6418-VB enable it to play an important role in various fields and modules, providing efficient and stable power management and control for electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
### Parameter Description:
- **Load Operating Voltage (VDS)**: 30V, specifies the maximum voltage of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 6A, indicates the maximum drain current that the transistor can withstand.
- **Static Drain-Source Resistance (RDS(ON))**: Under different gate voltages, the static drain-source resistance is 30mΩ. This parameter indicates the on-resistance when the transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 1.2V, is the gate voltage threshold at which the transistor starts to turn on.
- **Load Operating Voltage (VDS)**: 30V, specifies the maximum voltage of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 6A, indicates the maximum drain current that the transistor can withstand.
- **Static Drain-Source Resistance (RDS(ON))**: Under different gate voltages, the static drain-source resistance is 30mΩ. This parameter indicates the on-resistance when the transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 1.2V, is the gate voltage threshold at which the transistor starts to turn on.
Domain and module applications：
### Application fields and module examples:
1. **Mobile device charging management**: MIS6418-VB is suitable for mobile device charging management modules, which can achieve high-efficiency and high-performance power conversion and charging control, improve charging efficiency and device charging speed.
2. **LED lighting driver**: In the field of LED lighting, MIS6418-VB can be used in LED driver circuits to achieve efficient driving and brightness adjustment of LED lights and provide stable current output.
3. **Portable electronic products**: Due to its small package and high performance, MIS6418-VB is suitable for power management modules in various portable electronic products, such as smart phones, tablets, etc., providing stable power management and power control functions.
1. **Mobile device charging management**: MIS6418-VB is suitable for mobile device charging management modules, which can achieve high-efficiency and high-performance power conversion and charging control, improve charging efficiency and device charging speed.
2. **LED lighting driver**: In the field of LED lighting, MIS6418-VB can be used in LED driver circuits to achieve efficient driving and brightness adjustment of LED lights and provide stable current output.
3. **Portable electronic products**: Due to its small package and high performance, MIS6418-VB is suitable for power management modules in various portable electronic products, such as smart phones, tablets, etc., providing stable power management and power control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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