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IRFTS8342PBF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFTS8342PBF-VB is an N-channel field effect transistor produced by the brand VBsemi. The device has a drain-source voltage rating of 30V and can withstand a maximum drain current of 6A. Its on-resistance (RDS(ON)) in the on state is 30mΩ, which is the same when VGS=10V and
--VGS=±20V, and the gate-source threshold voltage (Vth) is 1.2V. The device is packaged in SOT23-6.
IRFTS8342PBF-VB is an N-channel field effect transistor produced by the brand VBsemi. The device has a drain-source voltage rating of 30V and can withstand a maximum drain current of 6A. Its on-resistance (RDS(ON)) in the on state is 30mΩ, which is the same when VGS=10V and
--VGS=±20V, and the gate-source threshold voltage (Vth) is 1.2V. The device is packaged in SOT23-6.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
2. Detailed parameter description:
- Channel type: N-channel
- Rated drain-source voltage (VDS): 30V
- Maximum drain current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V,
--VGS=±20V
- Gate-source threshold voltage (Vth): 1.2V
- Package type: SOT23-6
- Channel type: N-channel
- Rated drain-source voltage (VDS): 30V
- Maximum drain current (ID): 6A
- On-resistance (RDS(ON)): 30mΩ @ VGS=10V,
--VGS=±20V
- Gate-source threshold voltage (Vth): 1.2V
- Package type: SOT23-6
Domain and module applications：
3. Applicable fields and module examples:
1. **Power management**: IRFTS8342PBF-VB is suitable for low-power power management modules, such as battery management systems, power switches, etc. Its low drain-source voltage and drain current ratings are suitable for the needs of low-power devices.
2. **Mobile devices**: In the field of mobile devices, this device can be used to design mobile phone charging management modules, mobile power supplies, etc., because it can withstand lower voltages and currents, and has lower on-resistance, which can improve efficiency and performance.
3. **Automotive electronics**: IRFTS8342PBF-VB is suitable for low-power electronic devices in the automotive electronics field, such as car chargers, in-vehicle power management modules, etc., because it can provide sufficient current and voltage, and has lower on-resistance, which improves the stability and reliability of the system.
1. **Power management**: IRFTS8342PBF-VB is suitable for low-power power management modules, such as battery management systems, power switches, etc. Its low drain-source voltage and drain current ratings are suitable for the needs of low-power devices.
2. **Mobile devices**: In the field of mobile devices, this device can be used to design mobile phone charging management modules, mobile power supplies, etc., because it can withstand lower voltages and currents, and has lower on-resistance, which can improve efficiency and performance.
3. **Automotive electronics**: IRFTS8342PBF-VB is suitable for low-power electronic devices in the automotive electronics field, such as car chargers, in-vehicle power management modules, etc., because it can provide sufficient current and voltage, and has lower on-resistance, which improves the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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