中文
English
SI3456DDV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Application Introduction:**
SI3456DDV-T1-GE3-VB is an N-channel MOSFET with low drain-source resistance (RDS(ON)), high rated current and moderate voltage rating, suitable for power switching and amplifier applications in various electronic devices and modules. The performance parameters of this MOSFET make it suitable for a variety of fields.
SI3456DDV-T1-GE3-VB MOSFET has a wide range of applications in many fields, such as power control, current switching and signal amplification. Due to its performance parameters, it plays a key role in electronic modules and equipment.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
**Model:** SI3456DDV-T1-GE3-VB
**Silkscreen:** VB7322
**Brand:** VBsemi
**Parameters:**
- Channel type: N-channel
- Rated voltage: 30V
- Maximum current: 6A
- Static drain-source resistance (RDS(ON)): 30mΩ @ 10V, 40mΩ @ 4.5V
- Gate-source voltage threshold (Vth): 1.2V
- Standard gate-source voltage (±V): ±20V
- Package: SOT23-6
**Silkscreen:** VB7322
**Brand:** VBsemi
**Parameters:**
- Channel type: N-channel
- Rated voltage: 30V
- Maximum current: 6A
- Static drain-source resistance (RDS(ON)): 30mΩ @ 10V, 40mΩ @ 4.5V
- Gate-source voltage threshold (Vth): 1.2V
- Standard gate-source voltage (±V): ±20V
- Package: SOT23-6
Domain and module applications：
**Product Application Areas:**
1. **Power Management Module:** This type of MOSFET can be used in power management modules, such as power switches, to effectively control current, reduce power consumption and improve efficiency.
2. **Drive Circuit:** It can be used in various drive circuits, such as motor drive, lighting drive, etc., to improve the performance and response speed of the circuit.
3. **Battery Charge and Discharge Control:** In the battery management module, this MOSFET can be used to control the charge and discharge of the battery to ensure the safety and performance of the battery.
4. **LED Drive:** Used for LED lighting drive to help adjust the brightness and current to achieve an efficient lighting solution.
5. **Communication Equipment:** Used in various communication equipment, such as wireless routers, base stations and network equipment for power management and signal processing.
1. **Power Management Module:** This type of MOSFET can be used in power management modules, such as power switches, to effectively control current, reduce power consumption and improve efficiency.
2. **Drive Circuit:** It can be used in various drive circuits, such as motor drive, lighting drive, etc., to improve the performance and response speed of the circuit.
3. **Battery Charge and Discharge Control:** In the battery management module, this MOSFET can be used to control the charge and discharge of the battery to ensure the safety and performance of the battery.
4. **LED Drive:** Used for LED lighting drive to help adjust the brightness and current to achieve an efficient lighting solution.
5. **Communication Equipment:** Used in various communication equipment, such as wireless routers, base stations and network equipment for power management and signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
