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WTV3585-VB Product details
Back to previous pageProduct introduction：
WTV3585-VB is a dual N+P channel MOSFET, branded as VBsemi. The following is a product introduction, detailed parameter description, and examples of applicable fields and modules for this model:
**Product Introduction:**
WTV3585-VB is a dual N+P channel MOSFET with high performance and reliability, suitable for circuit designs that require simultaneous control of positive and negative polarity signals. It uses a SOT23-6 package and is suitable for space-constrained electronic devices.
**Product Introduction:**
WTV3585-VB is a dual N+P channel MOSFET with high performance and reliability, suitable for circuit designs that require simultaneous control of positive and negative polarity signals. It uses a SOT23-6 package and is suitable for space-constrained electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- Rated voltage (VDS): ±±20V
- Rated current (ID): 7A (N channel), 4.5A (P channel)
- On-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V (N channel), 79(mΩ) @ VGS=4.5V (P channel)
- Turn-on voltage (Vth): 0.71V (N channel), -0.81V (P channel)
- Package type: SOT23-6
- Rated voltage (VDS): ±±20V
- Rated current (ID): 7A (N channel), 4.5A (P channel)
- On-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V (N channel), 79(mΩ) @ VGS=4.5V (P channel)
- Turn-on voltage (Vth): 0.71V (N channel), -0.81V (P channel)
- Package type: SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management module**: WTV3585-VB can be used for power switch and inverter circuit design, suitable for portable electronic devices and embedded systems.
2. **Current detector**: In applications where positive and negative currents need to be detected simultaneously, this MOSFET can be used as a current detector for battery management and motor control.
3. **Signal switch**: Due to its dual N+P channel design, WTV3585-VB can be used for signal switching to achieve fast switching and control of positive and negative signals.
4. **Power amplifier**: In situations where positive and negative signal amplification needs to be controlled, this MOSFET can be used as the output stage of a power amplifier to provide efficient power amplification and signal control.
The above is a product introduction, detailed parameter description, and examples of application fields and modules for WTV3585-VB.
1. **Power management module**: WTV3585-VB can be used for power switch and inverter circuit design, suitable for portable electronic devices and embedded systems.
2. **Current detector**: In applications where positive and negative currents need to be detected simultaneously, this MOSFET can be used as a current detector for battery management and motor control.
3. **Signal switch**: Due to its dual N+P channel design, WTV3585-VB can be used for signal switching to achieve fast switching and control of positive and negative signals.
4. **Power amplifier**: In situations where positive and negative signal amplification needs to be controlled, this MOSFET can be used as the output stage of a power amplifier to provide efficient power amplification and signal control.
The above is a product introduction, detailed parameter description, and examples of application fields and modules for WTV3585-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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