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STT3585-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
STT3585-VB is a dual N+P channel field effect transistor (MOSFET) of VBsemi brand, with a versatile dual-channel design, suitable for various application scenarios in circuit design. It adopts SOT23-6 package and has excellent conduction characteristics and reliability.
STT3585-VB is a dual N+P channel field effect transistor (MOSFET) of VBsemi brand, with a versatile dual-channel design, suitable for various application scenarios in circuit design. It adopts SOT23-6 package and has excellent conduction characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- Silk screen: VB5222
- Brand: VBsemi
- Parameters:
- Channel type: Dual N+P channel
- Rated voltage (VDS): ±±20V
- Rated current (ID): 7A (N channel), 4.5A (P channel)
- On-resistance (RDS(ON)): 30(mΩ) (N channel @ VGS=4.5V), 79(mΩ) (P channel @ VGS=4.5V)
- Gate voltage (VGS): ±20V
- Threshold voltage (Vth): 0.71V (N channel), -0.81V (P channel)
- Silk screen: VB5222
- Brand: VBsemi
- Parameters:
- Channel type: Dual N+P channel
- Rated voltage (VDS): ±±20V
- Rated current (ID): 7A (N channel), 4.5A (P channel)
- On-resistance (RDS(ON)): 30(mΩ) (N channel @ VGS=4.5V), 79(mΩ) (P channel @ VGS=4.5V)
- Gate voltage (VGS): ±20V
- Threshold voltage (Vth): 0.71V (N channel), -0.81V (P channel)
Domain and module applications：
**Applicable fields and modules:**
STT3585-VB is suitable for the following fields and modules:
1. **Power management**: It can be used in modules such as low-voltage dropout power switches, DC-DC converters and power inverters to achieve efficient energy conversion and power management.
2. **Battery protection**: As part of the battery protection module, it is used to protect lithium batteries and other batteries from overcharge, overdischarge and short circuit to ensure the safety and stability of the battery.
3. **Current control**: It is suitable for current limiting and current control circuits to protect circuit components and equipment and ensure that the circuit operates within a safe current range.
4. **Power switch**: It can be used in the power switch module to achieve switch control of the circuit and protect circuit components and equipment.
5. **Power amplification**: It is used in the power amplifier circuit to amplify and drive the signal.
STT3585-VB has a dual N+P channel design, suitable for a variety of fields and modules, providing a flexible and reliable solution for circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
