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SPC6605ST6RG-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SPC6605ST6RG-VB is a dual-channel (N+P-Channel) MOSFET produced by VBsemi. It combines the advantages of N-Channel and P-Channel, with high rated voltage, high current capacity and low on-resistance, suitable for various power circuit designs.
**Detailed parameter description:**
1. **Rated voltage (VDS):** The rated voltage of ±±20V makes this MOSFET suitable for bipolar circuit design and can handle positive and negative voltage signals.
2. **Rated current (ID):** The N-Channel channel supports 7A of current, and the P-Channel channel supports 4.5A of current, providing higher power handling capabilities.
3. **On-resistance (RDS(ON)):** At VGS=4.5V, the on-resistance of the N-Channel channel is 30 (mΩ), and the on-resistance of the P-Channel channel is 79 (mΩ), which helps to reduce conduction loss and improve efficiency.
4. **Threshold voltage (Vth):** The threshold voltage of the N-Channel channel is 0.71V, and the threshold voltage of the P-Channel channel is -0.81V, making the device easy to control and drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**VBsemi N+P-Channel MOSFET SPC6605ST6RG-VB**
- **Silkscreen:** VB5222
- **Brand:** VBsemi
- **Parameters:**
- 2 N+P-Channel channels
- Rated voltage: ±±20V
- Rated current: 7A (N-Channel) / 4.5A (P-Channel)
- On-resistance (RDS(ON)): 30(mΩ) (N-Channel) / 79(mΩ) (P-Channel) @ VGS=4.5V
- Threshold voltage (Vth): 0.71V (N-Channel) / -0.81V (P-Channel)
- **Package:** SOT23-6
- **Silkscreen:** VB5222
- **Brand:** VBsemi
- **Parameters:**
- 2 N+P-Channel channels
- Rated voltage: ±±20V
- Rated current: 7A (N-Channel) / 4.5A (P-Channel)
- On-resistance (RDS(ON)): 30(mΩ) (N-Channel) / 79(mΩ) (P-Channel) @ VGS=4.5V
- Threshold voltage (Vth): 0.71V (N-Channel) / -0.81V (P-Channel)
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power amplifier:** Due to its dual-channel design, it can be used in the input and output stages of power amplifiers to achieve bipolar signal amplification.
2. **Power management:** It can be used in bipolar power management modules, such as battery management systems and bipolar regulators.
3. **Motor drive:** It is suitable for dual-power motor drivers, such as dual-power motor controllers and dual-power motor drive modules.
In summary, SPC6605ST6RG-VB is a high-performance dual-channel MOSFET that is suitable for a variety of fields, including power amplifiers, power management, and motor drives.
1. **Power amplifier:** Due to its dual-channel design, it can be used in the input and output stages of power amplifiers to achieve bipolar signal amplification.
2. **Power management:** It can be used in bipolar power management modules, such as battery management systems and bipolar regulators.
3. **Motor drive:** It is suitable for dual-power motor drivers, such as dual-power motor controllers and dual-power motor drive modules.
In summary, SPC6605ST6RG-VB is a high-performance dual-channel MOSFET that is suitable for a variety of fields, including power amplifiers, power management, and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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