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SI3586DV-T1-GE3-VB Product details
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**Product Introduction:**
SI3586DV-T1-GE3-VB is a dual N+P-Channel field effect transistor (MOSFET) of VBsemi brand, with two N channels and two P channels. Its rated voltage is ±±20V, the maximum rated current of the N channel is 7A, and the maximum rated current of the P channel is -4.5A. At a gate-source voltage of 4.5V, the on-resistance of the N channel is 30 (mΩ), and the on-resistance of the P channel is 79 (mΩ). The device adopts SOT23-6 package and is suitable for various low-power application scenarios.
SI3586DV-T1-GE3-VB is suitable for various modules and equipment in the fields of power management, current control, signal switching and power inverter, providing efficient power conversion and precise current control functions.
SI3586DV-T1-GE3-VB is a dual N+P-Channel field effect transistor (MOSFET) of VBsemi brand, with two N channels and two P channels. Its rated voltage is ±±20V, the maximum rated current of the N channel is 7A, and the maximum rated current of the P channel is -4.5A. At a gate-source voltage of 4.5V, the on-resistance of the N channel is 30 (mΩ), and the on-resistance of the P channel is 79 (mΩ). The device adopts SOT23-6 package and is suitable for various low-power application scenarios.
SI3586DV-T1-GE3-VB is suitable for various modules and equipment in the fields of power management, current control, signal switching and power inverter, providing efficient power conversion and precise current control functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- Channel type: 2 N+P-Channel channels
- Rated voltage (VDS): ±±20V
- N-channel rated current (ID): Maximum 7A
- P-channel rated current (ID): Maximum -4.5A
- N-channel on-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V
- P-channel on-resistance (RDS(ON)): 79(mΩ) @ VGS=4.5V
- Gate-source voltage (VGS): ±20V
- Gate-source threshold voltage (Vth): 0.71V (N-channel) / -0.81V (P-channel)
- Package type: SOT23-6
- Channel type: 2 N+P-Channel channels
- Rated voltage (VDS): ±±20V
- N-channel rated current (ID): Maximum 7A
- P-channel rated current (ID): Maximum -4.5A
- N-channel on-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V
- P-channel on-resistance (RDS(ON)): 79(mΩ) @ VGS=4.5V
- Gate-source voltage (VGS): ±20V
- Gate-source threshold voltage (Vth): 0.71V (N-channel) / -0.81V (P-channel)
- Package type: SOT23-6
Domain and module applications：
**Applicable fields and modules:**
1. **Power management**: SI3586DV-T1-GE3-VB can be used in low-power power management modules, such as power switches and power selectors. Its dual N+P-Channel structure enables precise control and switching of power, suitable for portable devices, embedded systems and consumer electronics.
2. **Current control**: In current control modules, the device can be used to precisely control the direction and size of current, such as motor drivers, LED lighting systems and electric vehicle controllers. Its dual-channel design makes it suitable for various current control scenarios, providing efficient current regulation and protection functions.
3. **Signal switch**: SI3586DV-T1-GE3-VB can be used as a signal switch for precise control and switching of signal lines. In communication equipment, network equipment and industrial automation systems, its dual-channel design helps achieve high-speed data transmission and stable signal transmission.
4. **Power Inverter**: This device can be used in low-power power inverter modules, such as solar inverters, UPS systems, and electric vehicle inverters. Its dual-channel trench design and high voltage tolerance can achieve efficient energy conversion and stable output voltage, improving the performance and reliability of power inverters.
1. **Power management**: SI3586DV-T1-GE3-VB can be used in low-power power management modules, such as power switches and power selectors. Its dual N+P-Channel structure enables precise control and switching of power, suitable for portable devices, embedded systems and consumer electronics.
2. **Current control**: In current control modules, the device can be used to precisely control the direction and size of current, such as motor drivers, LED lighting systems and electric vehicle controllers. Its dual-channel design makes it suitable for various current control scenarios, providing efficient current regulation and protection functions.
3. **Signal switch**: SI3586DV-T1-GE3-VB can be used as a signal switch for precise control and switching of signal lines. In communication equipment, network equipment and industrial automation systems, its dual-channel design helps achieve high-speed data transmission and stable signal transmission.
4. **Power Inverter**: This device can be used in low-power power inverter modules, such as solar inverters, UPS systems, and electric vehicle inverters. Its dual-channel trench design and high voltage tolerance can achieve efficient energy conversion and stable output voltage, improving the performance and reliability of power inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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