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SI3586DV-T1-E3-VB Product details
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**Product Introduction:**
SI3586DV-T1-E3-VB is a dual-channel field effect transistor of VBsemi brand, which includes two N-channels and a P-channel. This transistor is suitable for electronic applications that require control of positive and negative voltages. It adopts SOT23-6 package, which is compact and suitable for small circuit board applications. It has a positive and negative drain-source voltage tolerance of ±±20V, a drain current tolerance of 7A in the positive channel, and a drain current tolerance of 4.5A in the negative channel. In the positive channel, when the gate-source voltage is 4.5V, its on-resistance (RDS(ON)) is 30(mΩ); in the negative channel, the on-resistance is 79(mΩ). The threshold voltage (Vth) is 0.71V and -0.81V respectively.
SI3586DV-T1-E3-VB transistor has important application value in power inverter, power management, motor drive and battery protection, and can improve system efficiency and reliability.
SI3586DV-T1-E3-VB is a dual-channel field effect transistor of VBsemi brand, which includes two N-channels and a P-channel. This transistor is suitable for electronic applications that require control of positive and negative voltages. It adopts SOT23-6 package, which is compact and suitable for small circuit board applications. It has a positive and negative drain-source voltage tolerance of ±±20V, a drain current tolerance of 7A in the positive channel, and a drain current tolerance of 4.5A in the negative channel. In the positive channel, when the gate-source voltage is 4.5V, its on-resistance (RDS(ON)) is 30(mΩ); in the negative channel, the on-resistance is 79(mΩ). The threshold voltage (Vth) is 0.71V and -0.81V respectively.
SI3586DV-T1-E3-VB transistor has important application value in power inverter, power management, motor drive and battery protection, and can improve system efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- Positive and negative drain-source voltage tolerance: ±±20V
- Positive channel drain current tolerance: 7A
- Negative channel drain current tolerance: -4.5A
- Positive channel on-resistance (RDS(ON)):
- When VGS=4.5V: 30(mΩ)
-
--When VGS=±20V: 30(mΩ)
- Negative channel on-resistance (RDS(ON)):
- When VGS=4.5V: 79(mΩ)
-
--When VGS=±20V: 79(mΩ)
- Positive channel threshold voltage (Vth): 0.71V
- Negative channel threshold voltage (Vth): -0.81V
- Package type: SOT23-6
- Brand: VBsemi
- Positive and negative drain-source voltage tolerance: ±±20V
- Positive channel drain current tolerance: 7A
- Negative channel drain current tolerance: -4.5A
- Positive channel on-resistance (RDS(ON)):
- When VGS=4.5V: 30(mΩ)
-
--When VGS=±20V: 30(mΩ)
- Negative channel on-resistance (RDS(ON)):
- When VGS=4.5V: 79(mΩ)
-
--When VGS=±20V: 79(mΩ)
- Positive channel threshold voltage (Vth): 0.71V
- Negative channel threshold voltage (Vth): -0.81V
- Package type: SOT23-6
- Brand: VBsemi
Domain and module applications：
**Application fields and module examples:**
1. **Power inverter:** SI3586DV-T1-E3-VB can be used in power inverter circuits to achieve fast switching control of positive and negative voltages, such as solar inverters, electric vehicle inverters, etc.
2. **Power management:** In power management systems, SI3586DV-T1-E3-VB can be used in power switches and power regulation circuits to achieve precise regulation of different voltages, such as switching power supplies, battery charge and discharge management, etc.
3. **Motor drive:** In the field of industrial automation and robotics, SI3586DV-T1-E3-VB can be used in motor driver circuits to achieve efficient control and regulation of motors, such as stepper motor controllers, DC motor drivers, etc.
4. **Battery protection:** In mobile devices and portable electronic products, SI3586DV-T1-E3-VB can be used in battery protection circuits to protect batteries from overcharge, over discharge and short circuit problems, such as battery protection boards, smartphone battery management systems, etc.
1. **Power inverter:** SI3586DV-T1-E3-VB can be used in power inverter circuits to achieve fast switching control of positive and negative voltages, such as solar inverters, electric vehicle inverters, etc.
2. **Power management:** In power management systems, SI3586DV-T1-E3-VB can be used in power switches and power regulation circuits to achieve precise regulation of different voltages, such as switching power supplies, battery charge and discharge management, etc.
3. **Motor drive:** In the field of industrial automation and robotics, SI3586DV-T1-E3-VB can be used in motor driver circuits to achieve efficient control and regulation of motors, such as stepper motor controllers, DC motor drivers, etc.
4. **Battery protection:** In mobile devices and portable electronic products, SI3586DV-T1-E3-VB can be used in battery protection circuits to protect batteries from overcharge, over discharge and short circuit problems, such as battery protection boards, smartphone battery management systems, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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