中文
English
SI3585DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3585DV-T1-GE3-VB is a dual N+P-Channel MOSFET produced by VBsemi. It has a dual-channel design that contains both N-Channel and P-Channel channels, which can realize circuit designs with different power polarities in the same device. Its compact SOT23-6 package is suitable for space-constrained circuit designs.
**Detailed parameter description:**
1. **Rated voltage (VDS):** The rated voltage of ±±20V makes this MOSFET suitable for a variety of circuit designs, including power management and signal processing.
2. **Rated current (ID):**
- N-Channel channel: The rated current of 7A is suitable for medium power loads such as power switches and motor drivers.
- P-Channel channel: The rated current of -4.5A is suitable for applications such as load switches and reverse power supplies.
3. **On-resistance (RDS(ON)):**
- N-Channel: At a gate-source voltage of 4.5V, the on-resistance is 30 (mΩ), providing lower conduction losses.
- P-Channel: At a gate-source voltage of 4.5V, the on-resistance is 79 (mΩ), suitable for load switching and power reverse power circuits.
4. **Threshold voltage (Vth):**
- N-Channel: The threshold voltage is 0.71V, making the device easy to control and suitable for high-efficiency circuit design.
- P-Channel: The threshold voltage is -0.81V, which also makes the device easy to control and can realize power switching and reverse power design in circuits with different polarities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**VBsemi N+P-Channel MOSFET SI3585DV-T1-GE3-VB**
- **Silkscreen:** VB5222
- **Brand:** VBsemi
- **Parameters:**
- 2 N+P-Channel channels
- Rated voltage: ±±20V
- Rated current: 7A (N-Channel), -4.5A (P-Channel)
- On-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V (N-Channel), 79(mΩ) @ VGS=4.5V (P-Channel)
- Threshold voltage (Vth): 0.71V (N-Channel), -0.81V (P-Channel)
- **Package:** SOT23-6
- **Silkscreen:** VB5222
- **Brand:** VBsemi
- **Parameters:**
- 2 N+P-Channel channels
- Rated voltage: ±±20V
- Rated current: 7A (N-Channel), -4.5A (P-Channel)
- On-resistance (RDS(ON)): 30(mΩ) @ VGS=4.5V (N-Channel), 79(mΩ) @ VGS=4.5V (P-Channel)
- Threshold voltage (Vth): 0.71V (N-Channel), -0.81V (P-Channel)
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** Can be used for DC-DC converters, power switches, inverters and power reverse circuits, etc.
2. **Motor driver:** Suitable for bipolar motor drivers and power cascade circuits.
3. **Load switch:** Used for load switch modules and power reverse circuits, etc.
In summary, SI3585DV-T1-GE3-VB is a versatile dual N+P-Channel MOSFET with good performance and flexible application range, suitable for various low to medium power circuit designs.
1. **Power management:** Can be used for DC-DC converters, power switches, inverters and power reverse circuits, etc.
2. **Motor driver:** Suitable for bipolar motor drivers and power cascade circuits.
3. **Load switch:** Used for load switch modules and power reverse circuits, etc.
In summary, SI3585DV-T1-GE3-VB is a versatile dual N+P-Channel MOSFET with good performance and flexible application range, suitable for various low to medium power circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
