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QS6M3TR-VB Product details
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### Product Introduction
QS6M3TR-VB is a SOT23-6 packaged MOSFET product launched by VBsemi. It has 2 N+P channels and is suitable for applications that require high-performance MOSFET.
QS6M3TR-VB is a SOT23-6 packaged MOSFET product launched by VBsemi. It has 2 N+P channels and is suitable for applications that require high-performance MOSFET.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
### Detailed parameter description
- Extreme parameters:
- Gate-source voltage: ±±20V
- Continuous drain current: 7A (positive channel), 4.5A (negative channel)
- On-resistance: 30(mΩ) (VGS=4.5V), 79(mΩ) (
--VGS=±20V)
- Threshold voltage: 0.71V (positive channel), -0.81V (negative channel)
- Extreme parameters:
- Gate-source voltage: ±±20V
- Continuous drain current: 7A (positive channel), 4.5A (negative channel)
- On-resistance: 30(mΩ) (VGS=4.5V), 79(mΩ) (
--VGS=±20V)
- Threshold voltage: 0.71V (positive channel), -0.81V (negative channel)
Domain and module applications：
### Applicable fields and module examples
1. Power management module: The high drain current and low on-resistance of QS6M3TR-VB make it very suitable for switching circuits in power management modules.
2. Motor drive module: Its high drain current and high gate-source voltage range make it an ideal choice in motor drivers, capable of handling higher currents and voltages.
3. LED drive module: The low on-resistance and high threshold voltage of QS6M3TR-VB make it perform well in LED drive circuits, providing stable current to drive LEDs.
The above are just examples. In actual applications, QS6M3TR-VB can also be used in many other modules and fields, depending on design requirements and performance requirements.
1. Power management module: The high drain current and low on-resistance of QS6M3TR-VB make it very suitable for switching circuits in power management modules.
2. Motor drive module: Its high drain current and high gate-source voltage range make it an ideal choice in motor drivers, capable of handling higher currents and voltages.
3. LED drive module: The low on-resistance and high threshold voltage of QS6M3TR-VB make it perform well in LED drive circuits, providing stable current to drive LEDs.
The above are just examples. In actual applications, QS6M3TR-VB can also be used in many other modules and fields, depending on design requirements and performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
