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P5803NAG-VB Product details
Back to previous pageProduct introduction：
**P5803NAG-VB** is a dual-channel (N+P) field effect tube of VBsemi brand. The silk screen logo is VB5222 and the package is SOT23-6. The device has the following main parameters:
- **Drain-Source Voltage (VDS): ** ±±20V
- **Drain Current (ID): ** 7A (N-Channel) / -4.5A (P-Channel)
- **On-Resistance (RDS(ON)): ** 30(mΩ) @ VGS=4.5V (N-Channel) / 79(mΩ) @ VGS=4.5V (P-Channel)
- **Threshold Voltage (Vth): ** 0.71V (N-Channel) / -0.81V (P-Channel)
**Product Introduction: **
P5803NAG-VB is a high-performance dual-channel (N+P) field effect transistor that can be used in a variety of power electronic applications. It combines the characteristics of N-channel and P-channel with high power density and flexibility.
- **Drain-Source Voltage (VDS): ** ±±20V
- **Drain Current (ID): ** 7A (N-Channel) / -4.5A (P-Channel)
- **On-Resistance (RDS(ON)): ** 30(mΩ) @ VGS=4.5V (N-Channel) / 79(mΩ) @ VGS=4.5V (P-Channel)
- **Threshold Voltage (Vth): ** 0.71V (N-Channel) / -0.81V (P-Channel)
**Product Introduction: **
P5803NAG-VB is a high-performance dual-channel (N+P) field effect transistor that can be used in a variety of power electronic applications. It combines the characteristics of N-channel and P-channel with high power density and flexibility.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- **Model:** P5803NAG-VB
- **Brand:** VBsemi
- **Device type:** Dual-channel (N+P) field effect tube
- **Silkscreen:** VB5222
- **Package:** SOT23-6
- **N-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** 7A
- **On-resistance (RDS(ON)):** 30(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** 0.71V
- **P-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** -4.5A
- **On-resistance (RDS(ON)): ** 79(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth): ** -0.81V
- **Model:** P5803NAG-VB
- **Brand:** VBsemi
- **Device type:** Dual-channel (N+P) field effect tube
- **Silkscreen:** VB5222
- **Package:** SOT23-6
- **N-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** 7A
- **On-resistance (RDS(ON)):** 30(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** 0.71V
- **P-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** -4.5A
- **On-resistance (RDS(ON)): ** 79(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth): ** -0.81V
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** The P5803NAG-VB can be used in a variety of power management modules, such as switch-mode power supplies and DC-DC converters. Its dual-channel design and low on-resistance help improve system efficiency and power density.
2. **Battery protection:** In the battery protection circuit, the device can be used to control the battery charging and discharging process and protect the battery from overload and short circuit. Its dual-channel design makes it suitable for circuit designs that need to protect positive and negative voltages at the same time.
3. **Automotive electronic systems:** The P5803NAG-VB is suitable for load switches and power control modules in automotive electronic systems. For example, it is used in the ignition system and power switches in the fuel injection system in the automotive engine control unit (ECU).
4. **LED lighting:** The device can be used for load control in LED drivers and lighting systems. Its dual-channel design and high current handling capability help improve the efficiency and stability of LED lighting systems.
1. **Power management:** The P5803NAG-VB can be used in a variety of power management modules, such as switch-mode power supplies and DC-DC converters. Its dual-channel design and low on-resistance help improve system efficiency and power density.
2. **Battery protection:** In the battery protection circuit, the device can be used to control the battery charging and discharging process and protect the battery from overload and short circuit. Its dual-channel design makes it suitable for circuit designs that need to protect positive and negative voltages at the same time.
3. **Automotive electronic systems:** The P5803NAG-VB is suitable for load switches and power control modules in automotive electronic systems. For example, it is used in the ignition system and power switches in the fuel injection system in the automotive engine control unit (ECU).
4. **LED lighting:** The device can be used for load control in LED drivers and lighting systems. Its dual-channel design and high current handling capability help improve the efficiency and stability of LED lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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