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NTGD4167CT1G-VB Product details
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**NTGD4167CT1G-VB** is a dual-channel (N+P) field effect tube of VBsemi brand. The silk screen logo is VB5222 and the package is SOT23-6. The device has the following main parameters:
- **Drain-source voltage (VDS): ** ±±20V
- **Drain current (ID): ** 7A (N-Channel) / -4.5A (P-Channel)
- **On-resistance (RDS(ON)): ** 30(mΩ) @ VGS=4.5V (N-Channel) / 79(mΩ) @ VGS=4.5V (P-Channel)
- **Threshold voltage (Vth): ** 0.71V (N-Channel) / -0.81V (P-Channel)
**Product Introduction: **
NTGD4167CT1G-VB is a high-performance dual-channel field effect transistor with both N-channel and P-channel models. It is suitable for circuit designs that require simultaneous control of positive and negative voltages, providing flexibility and efficiency.
- **Drain-source voltage (VDS): ** ±±20V
- **Drain current (ID): ** 7A (N-Channel) / -4.5A (P-Channel)
- **On-resistance (RDS(ON)): ** 30(mΩ) @ VGS=4.5V (N-Channel) / 79(mΩ) @ VGS=4.5V (P-Channel)
- **Threshold voltage (Vth): ** 0.71V (N-Channel) / -0.81V (P-Channel)
**Product Introduction: **
NTGD4167CT1G-VB is a high-performance dual-channel field effect transistor with both N-channel and P-channel models. It is suitable for circuit designs that require simultaneous control of positive and negative voltages, providing flexibility and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- **Model:** NTGD4167CT1G-VB
- **Brand:** VBsemi
- **Device type:** Dual-channel (N+P) field effect tube
- **Silk screen:** VB5222
- **Package:** SOT23-6
- **N-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** 7A
- **On-resistance (RDS(ON)):** 30(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** 0.71V
- **P-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** -4.5A
- **On-resistance (RDS(ON)):** 79(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** -0.81V
- **Model:** NTGD4167CT1G-VB
- **Brand:** VBsemi
- **Device type:** Dual-channel (N+P) field effect tube
- **Silk screen:** VB5222
- **Package:** SOT23-6
- **N-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** 7A
- **On-resistance (RDS(ON)):** 30(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** 0.71V
- **P-Channel parameters:**
- **Drain-source voltage (VDS):** ±±20V
- **Drain current (ID):** -4.5A
- **On-resistance (RDS(ON)):** 79(mΩ) @ VGS=4.5V
- **Threshold voltage (Vth):** -0.81V
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** NTGD4167CT1G-VB can be used for power switches and current regulators in power management modules to flexibly control positive and negative voltages. For example, it is used for current protection and power switches in battery charge and discharge management systems.
2. **Circuit protection:** In the field of circuit protection, the device can be used in overvoltage and undervoltage protection circuits to protect various types of loads. For example, it is used for current and voltage protection functions in circuit switches and circuit breakers.
3. **Signal switch:** NTGD4167CT1G-VB can be used in high-frequency signal switch modules to control the switching of signal paths. For example, in RF switch circuits and antenna switches in wireless communication systems.
4. **Sensor interface:** In sensor interface circuits, the device can be used to control the amplification and reverse protection of sensor signals. For example, in temperature sensor and pressure sensor interface circuits to ensure the accuracy and stability of sensor signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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