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MTC3585G6-VB Product details
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The following is the product introduction and detailed parameter description of the MTC3585G6-VB model:
### Product introduction:
MTC3585G6-VB is a dual-channel (2 N+P-Channel) trench power field-effect transistor produced by VBsemi, with the following features:
- Load operating voltage: ±±20V
- Maximum drain current: 7A (N-Channel), -4.5A (P-Channel)
- N-Channel static drain-source resistance: 30(mΩ) @ VGS=4.5V
- P-Channel static drain-source resistance: 79(mΩ) @ VGS=4.5V
- Gate threshold voltage: 0.71V (N-Channel), -0.81V (P-Channel)
### Product introduction:
MTC3585G6-VB is a dual-channel (2 N+P-Channel) trench power field-effect transistor produced by VBsemi, with the following features:
- Load operating voltage: ±±20V
- Maximum drain current: 7A (N-Channel), -4.5A (P-Channel)
- N-Channel static drain-source resistance: 30(mΩ) @ VGS=4.5V
- P-Channel static drain-source resistance: 79(mΩ) @ VGS=4.5V
- Gate threshold voltage: 0.71V (N-Channel), -0.81V (P-Channel)
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
### Parameter Description:
- **Load Operating Voltage (VDS)**: ±±20V, specifies the maximum voltage range of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 7A (N-Channel), -4.5A (P-Channel), indicates the maximum drain current that the transistor can withstand.
- **N-Channel Static Drain-Source Resistance (RDS(ON))**: When the gate voltage is 4.5V, the N-Channel static drain-source resistance is 30 (mΩ). This parameter indicates the on-resistance when the N-Channel transistor is turned on.
- **P-Channel Static Drain-Source Resistance (RDS(ON))**: When the gate voltage is 4.5V, the P-Channel static drain-source resistance is 79 (mΩ). This parameter indicates the on-resistance when the P-Channel transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 0.71V (N-Channel), -0.81V (P-Channel), which is the gate voltage threshold at which the transistor starts to conduct.
- **Load Operating Voltage (VDS)**: ±±20V, specifies the maximum voltage range of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 7A (N-Channel), -4.5A (P-Channel), indicates the maximum drain current that the transistor can withstand.
- **N-Channel Static Drain-Source Resistance (RDS(ON))**: When the gate voltage is 4.5V, the N-Channel static drain-source resistance is 30 (mΩ). This parameter indicates the on-resistance when the N-Channel transistor is turned on.
- **P-Channel Static Drain-Source Resistance (RDS(ON))**: When the gate voltage is 4.5V, the P-Channel static drain-source resistance is 79 (mΩ). This parameter indicates the on-resistance when the P-Channel transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 0.71V (N-Channel), -0.81V (P-Channel), which is the gate voltage threshold at which the transistor starts to conduct.
Domain and module applications：
### Application fields and module examples:
1. **Power switch module**: The dual-channel design of MTC3585G6-VB makes it suitable for power switch modules, which can control positive and negative voltages at the same time, and provide stable power switching and regulation functions.
2. **Motor drive**: In the field of motor drive, MTC3585G6-VB can be used to control the forward and reverse rotation of the motor to achieve efficient motor drive and speed regulation.
3. **DC-DC converter**: Due to the high drain current and low drain-source resistance of MTC3585G6-VB, it is suitable for DC-DC converters to achieve high-efficiency voltage conversion and power management.
The characteristics of MTC3585G6-VB enable it to play an important role in various fields and modules, providing efficient and stable power control and management functions.
1. **Power switch module**: The dual-channel design of MTC3585G6-VB makes it suitable for power switch modules, which can control positive and negative voltages at the same time, and provide stable power switching and regulation functions.
2. **Motor drive**: In the field of motor drive, MTC3585G6-VB can be used to control the forward and reverse rotation of the motor to achieve efficient motor drive and speed regulation.
3. **DC-DC converter**: Due to the high drain current and low drain-source resistance of MTC3585G6-VB, it is suitable for DC-DC converters to achieve high-efficiency voltage conversion and power management.
The characteristics of MTC3585G6-VB enable it to play an important role in various fields and modules, providing efficient and stable power control and management functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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