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ELM16602EA-VB Product details
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**Product Introduction:**
ELM16602EA-VB is a dual-channel field effect transistor of VBsemi brand, including two N-channels and two P-channels, suitable for bipolar applications. Its operating voltage range is ±±20V, the maximum drain current is 7A (N-channel) and -4.5A (P-channel), and the drain-source resistance is 30 (mΩ) and 79 (mΩ) at 4.5V respectively. The gate-source voltage (VGS) is ±20V for N-channel and -±20V for P-channel, and the threshold voltage (Vth) is 0.71V for N-channel and -0.81V for P-channel. The package is SOT23-6.
ELM16602EA-VB is a dual-channel field effect transistor of VBsemi brand, including two N-channels and two P-channels, suitable for bipolar applications. Its operating voltage range is ±±20V, the maximum drain current is 7A (N-channel) and -4.5A (P-channel), and the drain-source resistance is 30 (mΩ) and 79 (mΩ) at 4.5V respectively. The gate-source voltage (VGS) is ±20V for N-channel and -±20V for P-channel, and the threshold voltage (Vth) is 0.71V for N-channel and -0.81V for P-channel. The package is SOT23-6.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
**Detailed parameter description:**
- **Channel type: ** 2 N-channel + 2 P-channel
- **Operating voltage range: ** ±±20V
- **Maximum drain current: **
- N-channel: 7A
- P-channel: -4.5A
- **Drain-source resistance (RDS(ON)): **
- N-channel: 30(mΩ) @ VGS=4.5V
- P-channel: 79(mΩ) @ VGS=4.5V
- **Gate-source voltage (VGS): **
- N-channel: ±20V
- P-channel: -±20V
- **Threshold voltage (Vth): **
- N-channel: 0.71V
- P-channel: -0.81V
- **Package:** SOT23-6
- **Channel type: ** 2 N-channel + 2 P-channel
- **Operating voltage range: ** ±±20V
- **Maximum drain current: **
- N-channel: 7A
- P-channel: -4.5A
- **Drain-source resistance (RDS(ON)): **
- N-channel: 30(mΩ) @ VGS=4.5V
- P-channel: 79(mΩ) @ VGS=4.5V
- **Gate-source voltage (VGS): **
- N-channel: ±20V
- P-channel: -±20V
- **Threshold voltage (Vth): **
- N-channel: 0.71V
- P-channel: -0.81V
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** ELM16602EA-VB can be used for power switching and reverse power protection in power management modules. Its dual-channel design makes it suitable for various bipolar power management applications, such as battery management, DC-DC converters, etc.
2. **Electric vehicles:** In electric vehicles, ELM16602EA-VB can be used as a motor controller or motor driver to control the start and stop and speed regulation of the motor of electric vehicles. Its bipolar design enables it to drive bipolar motors and is suitable for electric drive systems of electric vehicles.
3. **Industrial control:** ELM16602EA-VB can be used for power switches and drivers in industrial control systems to control power switching and power regulation of various loads and equipment. Its dual-channel design makes it suitable for the control and drive of bipolar loads.
In summary, the ELM16602EA-VB is suitable for a variety of applications requiring dual-channel functionality, including power management, electric vehicles, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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