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IRF5851TRPBF-VB Product details
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Detailed parameter description:
IRF5851TRPBF-VB is an N+P channel metal oxide semiconductor field effect transistor (MOSFET) device with dual channels, one of which is N channel and the other is P channel. It supports a rated voltage of ±±20V and has a maximum continuous current of 7A (forward) and -4.5A (reverse). RDS(ON) performs well at different voltages, which are 30(mΩ) @ 4.5V and 22mΩ @ 10V in the forward direction, and 79(mΩ) @ 4.5V and 106mΩ @ 10V in the reverse direction. In addition, the threshold voltages for forward and reverse directions are 0.71V and -0.81V, respectively.
Application introduction:
IRF5851TRPBF-VB is a versatile dual-channel MOSFET suitable for a variety of circuit applications. The SOT23-6 package makes it easy to mount on the circuit board. This type of MOSFET can provide reliable performance in circuits requiring N- and P-channel devices and is suitable for a variety of fields including electronics, communications, industrial control, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
Model: IRF5851TRPBF-VB
Silkscreen: VB5222
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±±20V
- Maximum continuous current: 7A (forward) / -4.5A (reverse)
- Static on-resistance (RDS(ON)): 30(mΩ) @ 4.5V (forward) / 79(mΩ) @ 4.5V (reverse), 22mΩ @ 10V (forward) / 106mΩ @ 10V (reverse)
- Threshold voltage (Vth): 0.71V (forward) / -0.81V (reverse)
- Package: SOT23-6
Silkscreen: VB5222
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±±20V
- Maximum continuous current: 7A (forward) / -4.5A (reverse)
- Static on-resistance (RDS(ON)): 30(mΩ) @ 4.5V (forward) / 79(mΩ) @ 4.5V (reverse), 22mΩ @ 10V (forward) / 106mΩ @ 10V (reverse)
- Threshold voltage (Vth): 0.71V (forward) / -0.81V (reverse)
- Package: SOT23-6
Domain and module applications：
It is commonly used in modules for power management, power switching, power converters, battery protection circuits, inverters, etc. Due to its dual-channel design, it has greater flexibility in design and can be used in applications under a variety of current and voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
