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AO6601-VB Product details
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Application Introduction:
AO6601-VB is a MOSFET with N+P channel, suitable for electronic applications requiring high performance power switching.
AO6601-VB has N+P channel, which can control both positive and negative current, and is suitable for a variety of applications, including power management, power switching and current control. In actual applications, please be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
Model: AO6601-VB
Silkscreen: VB5222
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±±20V
- Maximum continuous current: 7A / -4.5A
- Static on resistance (RDS(ON)): 30/79(mΩ) @ 4.5V, 22mΩ / 106mΩ @ 10V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 0.71V / -0.81V
- Package type: SOT23-6
Silkscreen: VB5222
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±±20V
- Maximum continuous current: 7A / -4.5A
- Static on resistance (RDS(ON)): 30/79(mΩ) @ 4.5V, 22mΩ / 106mΩ @ 10V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 0.71V / -0.81V
- Package type: SOT23-6
Domain and module applications：
Here are some possible application areas for the modules:
1. **Power switch module**: This MOSFET can be used in power switch modules to efficiently switch and regulate power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the AO6601-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **DC-DC converter**: In DC-DC converters, this MOSFET can be used to help achieve voltage step-up and step-down and power conversion. It is suitable for portable devices, communication equipment, and industrial applications.
4. **Motor drive module**: The AO6601-VB can be used in motor drive and control modules, including DC motors, stepper motors, and brushless DC motor drives.
5. **Current control module**: In applications that require high-performance current control, this MOSFET can be used in current sensor and current amplifier modules.
1. **Power switch module**: This MOSFET can be used in power switch modules to efficiently switch and regulate power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the AO6601-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **DC-DC converter**: In DC-DC converters, this MOSFET can be used to help achieve voltage step-up and step-down and power conversion. It is suitable for portable devices, communication equipment, and industrial applications.
4. **Motor drive module**: The AO6601-VB can be used in motor drive and control modules, including DC motors, stepper motors, and brushless DC motor drives.
5. **Current control module**: In applications that require high-performance current control, this MOSFET can be used in current sensor and current amplifier modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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