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UT9435-AB163-R-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
VBsemi UT9435-AB163-R-VB is a dual P-channel MOSFET with a rated voltage of -20V and a rated current of -4A. Its on-resistance RDS(ON) is 75mΩ at VGS=4.5V and 75mΩ at VGS=±12V; and its threshold voltage Vth is -0.6V. The silkscreen of this product is VB4290 and the package is SOT23-6.
VBsemi UT9435-AB163-R-VB is a dual P-channel MOSFET with a rated voltage of -20V and a rated current of -4A. Its on-resistance RDS(ON) is 75mΩ at VGS=4.5V and 75mΩ at VGS=±12V; and its threshold voltage Vth is -0.6V. The silkscreen of this product is VB4290 and the package is SOT23-6.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
**Detailed parameter description:**
- Model: UT9435-AB163-R-VB
- Brand: VBsemi
- Channel type: Dual P channel
- Maximum rated voltage (VDS): -20V
- Maximum rated current (ID): -4A
- On-resistance RDS(ON): 75mΩ (VGS=4.5V)
- Threshold voltage Vth: -0.6V
- Package: SOT23-6
- Model: UT9435-AB163-R-VB
- Brand: VBsemi
- Channel type: Dual P channel
- Maximum rated voltage (VDS): -20V
- Maximum rated current (ID): -4A
- On-resistance RDS(ON): 75mΩ (VGS=4.5V)
- Threshold voltage Vth: -0.6V
- Package: SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Battery management**: UT9435-AB163-R-VB can be applied to battery management modules, such as charging and discharging protection circuits, to provide a stable battery management solution.
2. **Power switch**: Due to its dual P-channel design and high on-current capability, this MOSFET can be used in various power switch modules, such as power switches and relay drivers.
3. **Analog switch**: UT9435-AB163-R-VB is suitable for analog switch circuits, such as signal switches and analog switches, to provide fast and efficient switching solutions.
4. **Low voltage power supply**: In applications that require a low voltage stable power supply, UT9435-AB163-R-VB can be used as a voltage stabilizer and regulator to provide a stable voltage output.
The above are only some examples. UT9435-AB163-R-VB can also play a role in many other applications, such as power management, audio amplifiers, sensor interfaces, etc.
1. **Battery management**: UT9435-AB163-R-VB can be applied to battery management modules, such as charging and discharging protection circuits, to provide a stable battery management solution.
2. **Power switch**: Due to its dual P-channel design and high on-current capability, this MOSFET can be used in various power switch modules, such as power switches and relay drivers.
3. **Analog switch**: UT9435-AB163-R-VB is suitable for analog switch circuits, such as signal switches and analog switches, to provide fast and efficient switching solutions.
4. **Low voltage power supply**: In applications that require a low voltage stable power supply, UT9435-AB163-R-VB can be used as a voltage stabilizer and regulator to provide a stable voltage output.
The above are only some examples. UT9435-AB163-R-VB can also play a role in many other applications, such as power management, audio amplifiers, sensor interfaces, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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