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UT9435-AB153-R-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
- **Model:** UT9435-AB153-R-VB
- **Silkscreen:** VB4290
- **Brand:** VBsemi
UT9435-AB153-R-VB is a P-Channel MOSFET produced by VBsemi with two independent P-Channel channels. The device is designed for an operating voltage of -20V with a maximum drain current of -4A per channel. It uses a SOT23-6 package with a small size and low on-resistance, suitable for applications requiring high integration and high performance.
- **Model:** UT9435-AB153-R-VB
- **Silkscreen:** VB4290
- **Brand:** VBsemi
UT9435-AB153-R-VB is a P-Channel MOSFET produced by VBsemi with two independent P-Channel channels. The device is designed for an operating voltage of -20V with a maximum drain current of -4A per channel. It uses a SOT23-6 package with a small size and low on-resistance, suitable for applications requiring high integration and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
### 2. Detailed parameter description
- **Type: ** 2 P-Channel MOSFET
- **Maximum drain-source voltage (VDS): ** -20V
- **Maximum drain current (ID): ** -4A
- **On-resistance (RDS(ON)): ** 75mΩ @ VGS=4.5V
- **Gate-source voltage (VGS): ** ±12V
- **Threshold voltage (Vth): ** -1.2V to -2.2V
- **Package: ** SOT23-6
- **Operating temperature range: ** -55°C to 150°C
- **Thermal resistance (junction to ambient): ** 250°C/W
- **Maximum pulsed drain current (IDM): ** -16A
- **Type: ** 2 P-Channel MOSFET
- **Maximum drain-source voltage (VDS): ** -20V
- **Maximum drain current (ID): ** -4A
- **On-resistance (RDS(ON)): ** 75mΩ @ VGS=4.5V
- **Gate-source voltage (VGS): ** ±12V
- **Threshold voltage (Vth): ** -1.2V to -2.2V
- **Package: ** SOT23-6
- **Operating temperature range: ** -55°C to 150°C
- **Thermal resistance (junction to ambient): ** 250°C/W
- **Maximum pulsed drain current (IDM): ** -16A
Domain and module applications：
### 3. Application fields and module examples
1. **Battery management:** UT9435-AB153-R-VB is suitable for battery protection modules in portable devices and battery management systems. Its low on-resistance and high drain current characteristics enable it to provide high-efficiency power switching and protection functions in battery management systems.
2. **Signal switch:** In various signal switching circuits, UT9435-AB153-R-VB can be used as a switching element to control the switching and transmission of signals. Its high-speed switching characteristics and low on-resistance help to improve the speed and stability of signal transmission.
3. **Power switch:** In low-power power management systems, UT9435-AB153-R-VB can be used as a power switch to control the switching and regulation of power. Its high efficiency and low power consumption characteristics help to improve the energy efficiency and stability of power management systems.
4. **Analog circuits:** UT9435-AB153-R-VB is suitable for power amplifiers and signal control circuits in analog circuits. Its high drain current and low on-resistance characteristics help improve the performance and stability of analog circuits.
5. **Medical equipment:** In medical equipment, UT9435-AB153-R-VB can be used in various control and switching circuits, such as sensor interfaces and motor controls. Its high reliability and stability help ensure the safe and reliable operation of medical equipment.
From the above examples, it can be seen that UT9435-AB153-R-VB has a wide range of applications in multiple fields and modules. Its high performance, high reliability and small size make it an ideal choice for various low-power and small-size applications, and can meet the needs of different fields for high-performance devices.
1. **Battery management:** UT9435-AB153-R-VB is suitable for battery protection modules in portable devices and battery management systems. Its low on-resistance and high drain current characteristics enable it to provide high-efficiency power switching and protection functions in battery management systems.
2. **Signal switch:** In various signal switching circuits, UT9435-AB153-R-VB can be used as a switching element to control the switching and transmission of signals. Its high-speed switching characteristics and low on-resistance help to improve the speed and stability of signal transmission.
3. **Power switch:** In low-power power management systems, UT9435-AB153-R-VB can be used as a power switch to control the switching and regulation of power. Its high efficiency and low power consumption characteristics help to improve the energy efficiency and stability of power management systems.
4. **Analog circuits:** UT9435-AB153-R-VB is suitable for power amplifiers and signal control circuits in analog circuits. Its high drain current and low on-resistance characteristics help improve the performance and stability of analog circuits.
5. **Medical equipment:** In medical equipment, UT9435-AB153-R-VB can be used in various control and switching circuits, such as sensor interfaces and motor controls. Its high reliability and stability help ensure the safe and reliable operation of medical equipment.
From the above examples, it can be seen that UT9435-AB153-R-VB has a wide range of applications in multiple fields and modules. Its high performance, high reliability and small size make it an ideal choice for various low-power and small-size applications, and can meet the needs of different fields for high-performance devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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