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UT9435-AB149-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's UT9435-AB149-R-VB is a P-channel field effect transistor with the silkscreen VB4290. It uses a SOT23-6 package and is suitable for power switching and current control applications in various electronic devices.
VBsemi's UT9435-AB149-R-VB is a P-channel field effect transistor with the silkscreen VB4290. It uses a SOT23-6 package and is suitable for power switching and current control applications in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
### Parameter description:
- **Channel type: ** P-channel
- **Maximum drain-source voltage: ** -20V
- **Maximum drain current: ** -4A
- **On-resistance: ** 75mΩ @ VGS=4.5V,;
VGS=±12V;
- **Gate-source threshold voltage: ** -0.6V
- **Channel type: ** P-channel
- **Maximum drain-source voltage: ** -20V
- **Maximum drain current: ** -4A
- **On-resistance: ** 75mΩ @ VGS=4.5V,;
VGS=±12V;
- **Gate-source threshold voltage: ** -0.6V
Domain and module applications：
### Applications and Modules:
1. **Power Management:** Due to its P-channel characteristics and high drain-source voltage, the UT9435-AB149-R-VB is ideal for low-voltage power management, such as mobile devices and battery-powered systems.
2. **Current Control:** The high drain current capability of the device makes it ideal for current control circuits, especially where a P-channel MOSFET is required.
3. **Power Switch:** Due to its low on-resistance and high drain-source voltage, the UT9435-AB149-R-VB can be used as a variety of power switches, including low-voltage and medium-voltage applications.
4. **Driver:** In driver circuits that need to drive P-channel MOSFETs, the UT9435-AB149-R-VB can provide efficient driving and reliable performance.
5. **Other Applications:** This product is also suitable for various electronic modules and systems that require P-channel MOSFET, such as power amplifiers, power tools, medical equipment, etc.
1. **Power Management:** Due to its P-channel characteristics and high drain-source voltage, the UT9435-AB149-R-VB is ideal for low-voltage power management, such as mobile devices and battery-powered systems.
2. **Current Control:** The high drain current capability of the device makes it ideal for current control circuits, especially where a P-channel MOSFET is required.
3. **Power Switch:** Due to its low on-resistance and high drain-source voltage, the UT9435-AB149-R-VB can be used as a variety of power switches, including low-voltage and medium-voltage applications.
4. **Driver:** In driver circuits that need to drive P-channel MOSFETs, the UT9435-AB149-R-VB can provide efficient driving and reliable performance.
5. **Other Applications:** This product is also suitable for various electronic modules and systems that require P-channel MOSFET, such as power amplifiers, power tools, medical equipment, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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