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RQJ0469FQDQS-VB Product details
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VBsemi P-Channel MOSFET RQJ0469FQDQS-VB
Brand: VBsemi
Silkscreen: VB4290
Product Introduction:
RQJ0469FQDQS-VB is a P-Channel MOSFET produced by VBsemi with 2 P-Channel channels. It adopts SOT23-6 package and is suitable for various low-voltage and low-power applications.
Detailed parameter description:
1. **Rated voltage (VDS)**: The rated voltage of -20V is suitable for low-voltage applications, such as battery-powered systems or low-voltage circuits.
2. **Rated current (ID)**: The rated current of -4A enables the device to withstand a certain current load and is suitable for low-power applications.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 4.5V, RDS(ON) is 75mΩ, providing a relatively low on-resistance, which helps to reduce power loss.
4. **Threshold voltage (Vth)**: The threshold voltage is between -1.2V and -2.2V, making the device easy to control and suitable for a variety of circuit designs.
RQJ0469FQDQS-VB is a P-Channel MOSFET suitable for a variety of low-power, low-voltage applications, especially for mobile devices, sensor control, consumer electronics and medical equipment.
Brand: VBsemi
Silkscreen: VB4290
Product Introduction:
RQJ0469FQDQS-VB is a P-Channel MOSFET produced by VBsemi with 2 P-Channel channels. It adopts SOT23-6 package and is suitable for various low-voltage and low-power applications.
Detailed parameter description:
1. **Rated voltage (VDS)**: The rated voltage of -20V is suitable for low-voltage applications, such as battery-powered systems or low-voltage circuits.
2. **Rated current (ID)**: The rated current of -4A enables the device to withstand a certain current load and is suitable for low-power applications.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 4.5V, RDS(ON) is 75mΩ, providing a relatively low on-resistance, which helps to reduce power loss.
4. **Threshold voltage (Vth)**: The threshold voltage is between -1.2V and -2.2V, making the device easy to control and suitable for a variety of circuit designs.
RQJ0469FQDQS-VB is a P-Channel MOSFET suitable for a variety of low-power, low-voltage applications, especially for mobile devices, sensor control, consumer electronics and medical equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Parameters:
- 2 P-Channel channels
- Rated voltage: -20V
- Rated current: -4A
- RDS(ON): 75mΩ @ VGS=4.5V
- RDS(ON): 20mΩ @ ;
VGS=±12V;
- Threshold voltage: -1.2V to -2.2V
Package: SOT23-6
Domain and module applications：
Examples of applicable fields and modules of this product:
1. **Mobile devices**: Due to its low voltage and low power characteristics, RQJ0469FQDQS-VB is suitable for battery management systems, charge and discharge control, etc. in mobile devices.
2. **Sensor control**: In sensor control modules, this P-Channel MOSFET can be used for sensor driving and signal conditioning.
3. **Consumer electronics**: In small electronic products, such as smart watches, headphones, etc., this device can be used for power management, signal control, etc.
4. **Medical equipment**: In medical equipment, RQJ0469FQDQS-VB can be used for various low-power circuits, such as medical sensors, control modules, etc.
1. **Mobile devices**: Due to its low voltage and low power characteristics, RQJ0469FQDQS-VB is suitable for battery management systems, charge and discharge control, etc. in mobile devices.
2. **Sensor control**: In sensor control modules, this P-Channel MOSFET can be used for sensor driving and signal conditioning.
3. **Consumer electronics**: In small electronic products, such as smart watches, headphones, etc., this device can be used for power management, signal control, etc.
4. **Medical equipment**: In medical equipment, RQJ0469FQDQS-VB can be used for various low-power circuits, such as medical sensors, control modules, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
