RQJ0452FQDQS-VB Product details
Product introduction:
RQJ0452FQDQS-VB is a P-Channel trench MOSFET produced by VBsemi with two channels. The rated voltage of each channel is -20V and the rated current is -4A. It has a low on-resistance (RDS(ON)=75mΩ@VGS=4.5V) and a moderate gate threshold voltage (Vth=-0.6V). The product adopts SOT23-6 package.
RQJ0452FQDQS-VB is suitable for various fields and modules, including portable electronic products, signal switches, low-power circuits and portable power supplies.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description:
- Channel type: P-Channel (2 channels)
- Rated voltage (VDS): -20V
- Rated current (ID): -4A
- On-resistance (RDS(ON)): 75mΩ @ VGS=4.5V
- Gate voltage (VGS): ±12V
- Gate threshold voltage (Vth): -0.6V
- Package type: SOT23-6
Domain and module applications:
1. **Portable electronic products**: Due to its small package and two channels, RQJ0452FQDQS-VB is suitable for portable electronic products such as smartphones, tablets, etc. It can be used for battery management, charging protection and other functions to meet the power consumption and space requirements of portable electronic products.
2. **Signal switch**: In the signal switching circuit, this MOSFET can be used to control the connection and disconnection of signal lines, such as signal switching in audio equipment and communication equipment. Its low on-resistance and moderate gate threshold voltage help to achieve fast response and low power consumption signal switching.
3. **Low power circuit**: Due to its low on-resistance and gate threshold voltage, RQJ0452FQDQS-VB is suitable for low power circuit design, such as sensor interface, standby power management and other applications.
4. **Portable power supply**: In portable power supply modules, this product can be used for battery charging and discharging protection, voltage regulation and other functions. Its small size and low power consumption make it suitable for the design of portable power supply equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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