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RQJ0443FQDQS-VB Product details
Back to previous pageProduct introduction：
The following is the product information of RQJ0443FQDQS-VB:
### Product Introduction
RQJ0443FQDQS-VB is a P-Channel power MOSFET produced by VBsemi brand, using SOT23-6 package. The device has two P-Channel channels and is suitable for various low-voltage, low-power circuit designs.
RQJ0443FQDQS-VB is suitable for various low-voltage, low-power circuit designs, including battery protection circuits, low-power switching circuits, portable electronic devices and battery charging management.
### Product Introduction
RQJ0443FQDQS-VB is a P-Channel power MOSFET produced by VBsemi brand, using SOT23-6 package. The device has two P-Channel channels and is suitable for various low-voltage, low-power circuit designs.
RQJ0443FQDQS-VB is suitable for various low-voltage, low-power circuit designs, including battery protection circuits, low-power switching circuits, portable electronic devices and battery charging management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
### Detailed parameter description
- **Voltage rating (VDS):** -20V
- **Current rating (ID):** -4A
- **On-resistance (RDS(ON)):** 75mΩ @ VGS = 4.5V
- **Threshold voltage (Vth):** -1.2V to -2.2V
- **Maximum gate-source voltage (VGS(max)):** ±12V
- **Voltage rating (VDS):** -20V
- **Current rating (ID):** -4A
- **On-resistance (RDS(ON)):** 75mΩ @ VGS = 4.5V
- **Threshold voltage (Vth):** -1.2V to -2.2V
- **Maximum gate-source voltage (VGS(max)):** ±12V
Domain and module applications：
### Application fields and module examples
1. **Battery protection circuit:** In portable devices such as smartphones, tablets, etc., P-Channel MOSFET is required to build battery protection circuits to ensure safe battery charging and discharging and prevent overcurrent and overvoltage.
2. **Low-power switching circuit:** Due to its low voltage and low power characteristics, RQJ0443FQDQS-VB is suitable for various low-power switching circuits, such as LED light control, small motor control, etc., and can achieve efficient circuit control.
3. **Portable electronic devices:** Due to its small package and low power consumption, the device is suitable for various portable electronic devices such as handheld game consoles, portable audio devices, etc., for power management and signal switch control.
4. **Battery charging management:** In battery charging management circuits, P-Channel MOSFET is usually used for charging switch control and battery status monitoring. RQJ0443FQDQS-VB can be used in these applications to achieve efficient battery charging management.
1. **Battery protection circuit:** In portable devices such as smartphones, tablets, etc., P-Channel MOSFET is required to build battery protection circuits to ensure safe battery charging and discharging and prevent overcurrent and overvoltage.
2. **Low-power switching circuit:** Due to its low voltage and low power characteristics, RQJ0443FQDQS-VB is suitable for various low-power switching circuits, such as LED light control, small motor control, etc., and can achieve efficient circuit control.
3. **Portable electronic devices:** Due to its small package and low power consumption, the device is suitable for various portable electronic devices such as handheld game consoles, portable audio devices, etc., for power management and signal switch control.
4. **Battery charging management:** In battery charging management circuits, P-Channel MOSFET is usually used for charging switch control and battery status monitoring. RQJ0443FQDQS-VB can be used in these applications to achieve efficient battery charging management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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