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RQJ0442FQDQS-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
VBsemi's RQJ0442FQDQS-VB is a P-Channel trench MOSFET with two channels. The rated voltage of each channel is -20V and the rated current is -4A. The characteristics of this product include low on-resistance (RDS(ON)=75mΩ@VGS=4.5V) and moderate gate threshold voltage (Vth=-0.6V). The package adopts SOT23-6.
RQJ0442FQDQS-VB is suitable for various fields and modules that require P-Channel trench MOSFET, including low-voltage circuit protection, signal switching, power management and DC-DC converters.
VBsemi's RQJ0442FQDQS-VB is a P-Channel trench MOSFET with two channels. The rated voltage of each channel is -20V and the rated current is -4A. The characteristics of this product include low on-resistance (RDS(ON)=75mΩ@VGS=4.5V) and moderate gate threshold voltage (Vth=-0.6V). The package adopts SOT23-6.
RQJ0442FQDQS-VB is suitable for various fields and modules that require P-Channel trench MOSFET, including low-voltage circuit protection, signal switching, power management and DC-DC converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description:
- Channel type: P-Channel (2 channels)
- Rated voltage (VDS): -20V
- Rated current (ID): -4A
- On-resistance (RDS(ON)): 75mΩ @ VGS=4.5V
- Gate voltage (VGS): ±12V
- Gate threshold voltage (Vth): -0.6V
- Package type: SOT23-6
Domain and module applications：
Applicable fields and modules:
1. **Low-voltage circuit protection**: RQJ0442FQDQS-VB is suitable for low-voltage circuit protection, such as battery management systems, charge and discharge protection circuits, etc. Its P-Channel design makes it suitable for load-side switches, which can be used to implement overvoltage protection and reverse polarity protection of circuits.
2. **Signal switch**: In signal switching circuits, this MOSFET can be used to control the connection and disconnection of signal lines, such as signal switching in audio equipment and communication equipment. Its low on-resistance and moderate gate threshold voltage help to achieve fast response and low power consumption signal switching.
3. **Power management**: In portable electronic products, RQJ0442FQDQS-VB can be used in power management modules, such as charging management, battery protection, etc. Its low voltage and low power consumption characteristics are suitable for the power management needs of portable devices.
4. **DC-DC converter**: In DC-DC converters, this product can be used as a synchronous rectifier or a switch tube in the circuit to improve conversion efficiency and reduce power consumption. Its low on-resistance and moderate gate threshold voltage make it suitable for various DC-DC converter designs.
1. **Low-voltage circuit protection**: RQJ0442FQDQS-VB is suitable for low-voltage circuit protection, such as battery management systems, charge and discharge protection circuits, etc. Its P-Channel design makes it suitable for load-side switches, which can be used to implement overvoltage protection and reverse polarity protection of circuits.
2. **Signal switch**: In signal switching circuits, this MOSFET can be used to control the connection and disconnection of signal lines, such as signal switching in audio equipment and communication equipment. Its low on-resistance and moderate gate threshold voltage help to achieve fast response and low power consumption signal switching.
3. **Power management**: In portable electronic products, RQJ0442FQDQS-VB can be used in power management modules, such as charging management, battery protection, etc. Its low voltage and low power consumption characteristics are suitable for the power management needs of portable devices.
4. **DC-DC converter**: In DC-DC converters, this product can be used as a synchronous rectifier or a switch tube in the circuit to improve conversion efficiency and reduce power consumption. Its low on-resistance and moderate gate threshold voltage make it suitable for various DC-DC converter designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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