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SPP6507S26RGB-VB Product details
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Application Introduction:
This type of P-channel MOSFET is generally suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially for applications that need to handle negative voltage.
This type of P-channel MOSFET is generally suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially for applications that need to handle negative voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Model: SPP6507S26RGB-VB
Silkscreen: VB4290
Brand: VBsemi
Parameters: 2 P-channel, -20V, -4A, RDS(ON) 75mΩ @ 4.5V, 100mΩ @ 2.5V, 12Vgs (±V); -0.6Vth (V)
Package: SOT23-6
Detailed parameter description and application introduction:
1. Channel type: 2 P-channel
- This means that this is a pair of P-channel MOSFETs, which are usually used in power switching and power management applications where positive voltage supplies need to be controlled.
2. Rated voltage (VDS): -20V
- This is the maximum negative voltage that the channel MOSFET can withstand, indicating that it is suitable for circuits that need to handle negative voltages.
3. Rated Current (ID): -4A
- This is the rated current of the trench MOSFET, indicating the maximum negative current load it can handle.
4. Static Drain-Source Resistance (RDS(ON)):
- RDS(ON) is the resistance of the trench MOSFET in the on state. At 4.5V, its resistance is 75mΩ, while at 2.5V it is 100mΩ. This shows that in the on state, its resistance is relatively low, which can effectively reduce power consumption and heat.
5. Gate-Source Voltage Rating (Vgs): 12V (±V)
- This means that the rated range of the gate-source voltage is plus or minus 12V. The gate-source voltage is used to control the on and off states of the MOSFET.
6. Threshold Voltage Range (Vth): -1.2V to -2.2V
- This is the threshold voltage range for a trench MOSFET and represents the voltage that needs to be applied to the gate in order for the device to start conducting. In this case, the threshold voltage range is -1.2V to -2.2V.
Silkscreen: VB4290
Brand: VBsemi
Parameters: 2 P-channel, -20V, -4A, RDS(ON) 75mΩ @ 4.5V, 100mΩ @ 2.5V, 12Vgs (±V); -0.6Vth (V)
Package: SOT23-6
Detailed parameter description and application introduction:
1. Channel type: 2 P-channel
- This means that this is a pair of P-channel MOSFETs, which are usually used in power switching and power management applications where positive voltage supplies need to be controlled.
2. Rated voltage (VDS): -20V
- This is the maximum negative voltage that the channel MOSFET can withstand, indicating that it is suitable for circuits that need to handle negative voltages.
3. Rated Current (ID): -4A
- This is the rated current of the trench MOSFET, indicating the maximum negative current load it can handle.
4. Static Drain-Source Resistance (RDS(ON)):
- RDS(ON) is the resistance of the trench MOSFET in the on state. At 4.5V, its resistance is 75mΩ, while at 2.5V it is 100mΩ. This shows that in the on state, its resistance is relatively low, which can effectively reduce power consumption and heat.
5. Gate-Source Voltage Rating (Vgs): 12V (±V)
- This means that the rated range of the gate-source voltage is plus or minus 12V. The gate-source voltage is used to control the on and off states of the MOSFET.
6. Threshold Voltage Range (Vth): -1.2V to -2.2V
- This is the threshold voltage range for a trench MOSFET and represents the voltage that needs to be applied to the gate in order for the device to start conducting. In this case, the threshold voltage range is -1.2V to -2.2V.
Domain and module applications：
Including but not limited to the following fields and modules:
1. Power switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion.
2. Battery management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharge.
3. Power inverter: In solar inverters and UPS (uninterruptible power supply), P-channel MOSFET can be used to control the flow of power.
4. Power selection and switching: It can be used in power selectors and power switches to switch between different power sources.
1. Power switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion.
2. Battery management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharge.
3. Power inverter: In solar inverters and UPS (uninterruptible power supply), P-channel MOSFET can be used to control the flow of power.
4. Power selection and switching: It can be used in power selectors and power switches to switch between different power sources.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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