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SI3911DV-T1-GE3-VB Product details
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Application Introduction:
SI3911DV-T1-GE3 is a device with two P-channel MOSFETs, suitable for applications that need to control multiple P-channel MOSFETs simultaneously. Its maximum withstand voltage is -20V, maximum current is -4A, with low on-resistance and high performance.
Suitable for module design in high-power application fields that need to control multiple P-channel MOSFETs simultaneously, including power management, high-voltage load switch modules and power tools.
SI3911DV-T1-GE3 is a device with two P-channel MOSFETs, suitable for applications that need to control multiple P-channel MOSFETs simultaneously. Its maximum withstand voltage is -20V, maximum current is -4A, with low on-resistance and high performance.
Suitable for module design in high-power application fields that need to control multiple P-channel MOSFETs simultaneously, including power management, high-voltage load switch modules and power tools.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Model: SI3911DV-T1-GE3
Silkscreen: VB4290
Brand: VBsemi
Detailed parameter description:
- Type: 2 P-channel MOSFET
- Maximum withstand voltage: -20V
- Maximum current: -4A
- On-resistance: 75mΩ @4.5V, 100mΩ @2.5V
- Gate-source voltage: 12Vgs (±V)
- Gate threshold voltage: -0.6Vth
- Package: SOT23-6
Silkscreen: VB4290
Brand: VBsemi
Detailed parameter description:
- Type: 2 P-channel MOSFET
- Maximum withstand voltage: -20V
- Maximum current: -4A
- On-resistance: 75mΩ @4.5V, 100mΩ @2.5V
- Gate-source voltage: 12Vgs (±V)
- Gate threshold voltage: -0.6Vth
- Package: SOT23-6
Domain and module applications：
The device is suitable for module design in multiple fields, mainly including:
1. Power management module: Suitable for power management module responsible for power switch and load switch control.
2. High-voltage load switch module: Suitable for high-voltage load switch and power control.
3. Power tools: Can be used for negative power control and load switch in power tools.
1. Power management module: Suitable for power management module responsible for power switch and load switch control.
2. High-voltage load switch module: Suitable for high-voltage load switch and power control.
3. Power tools: Can be used for negative power control and load switch in power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
