FDC6306P-VB Product details
Product introduction:
Application Introduction:
FDC6306P is a dual P-channel MOSFET suitable for various power management and power amplifier applications. It has negative rated voltage and rated current characteristics, and can provide reliable and efficient current switching function.
By controlling the gate-source voltage of 12Vgs (±V), the switch tube can be turned on and off, and the current can be controlled and the switching state can be converted. Its lower on-resistance can reduce power consumption and improve system efficiency.
FDC6306P adopts SOT23-6 package, which is suitable for use in various circuit boards and modules.
FDC6306P is a dual P-channel MOSFET suitable for various application modules of power management and power amplifiers, especially for fields that need to control and switch negative voltages, such as power switches, motor drivers, etc.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
- Polarity: 2 P-channel
- Rated voltage: -20V
- Rated current: -4A
- On-resistance: 75mΩ @ 4.5V, 100mΩ @ 2.5V
- Gate-source voltage: 12Vgs (±V)
- Threshold voltage: -0.6Vth (V)
- Package type: SOT23-6
Domain and module applications:
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