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BSL308PE-VB Product details
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Application Introduction:
BSL308PE-VB is commonly used in power management, power switching and power converter applications, especially for circuits requiring P-channel MOSFETs. Due to its dual P-channel characteristics, it is suitable for inverting switches and negative power supply circuits. The SOT23-6 package makes it easy to integrate into small electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100（mΩ） | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Model: BSL308PE-VB
Silkscreen: VB4290
Brand: VBsemi
Parameters:
- Channel type: 2 P-channels
- Rated voltage: -20V
- Maximum continuous current: -4A
- Static on-resistance (RDS(ON)): 75mΩ @ 4.5V, 100mΩ @ 2.5V, 12Vgs (±V)
- Threshold voltage (Vth): -0.6V
- Package: SOT23-6
Detailed parameter description:
BSL308PE-VB is a metal oxide semiconductor field effect transistor (MOSFET) device with two P-channels, with a rated voltage of -20V and a maximum continuous current of -4A. The RDS(ON) of each P-channel MOSFET is very good at different voltages, 75mΩ @ 4.5V and 100mΩ @ 2.5V. The threshold voltage (Vth) ranges from -1.2V to -2.2V.
Silkscreen: VB4290
Brand: VBsemi
Parameters:
- Channel type: 2 P-channels
- Rated voltage: -20V
- Maximum continuous current: -4A
- Static on-resistance (RDS(ON)): 75mΩ @ 4.5V, 100mΩ @ 2.5V, 12Vgs (±V)
- Threshold voltage (Vth): -0.6V
- Package: SOT23-6
Detailed parameter description:
BSL308PE-VB is a metal oxide semiconductor field effect transistor (MOSFET) device with two P-channels, with a rated voltage of -20V and a maximum continuous current of -4A. The RDS(ON) of each P-channel MOSFET is very good at different voltages, 75mΩ @ 4.5V and 100mΩ @ 2.5V. The threshold voltage (Vth) ranges from -1.2V to -2.2V.
Domain and module applications：
This type of MOSFET can be used in modules in various fields such as power inverters, power switches, battery protection circuits, mobile devices, power management, power amplifiers, power tools and other low to medium power applications that require high performance MOSFETs. Its low on-resistance and high current handling capability make it very useful in high efficiency, low power consumption applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
