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NTGD3148NT1G-VB Product details
Back to previous pageProduct introduction：
The NTGD3148NT1G MOS tube adopts a compact SOT23-6 package, which provides high flexibility and integration for various circuit designs. It has a wide range of applications in many fields. In the fields of power management, switching power supply and power amplification, the NTGD3148NT1G MOS tube can exert its superior electrical performance and achieve efficient energy conversion. In the battery management system, this product can be used for battery charge and discharge management, protection and control. In addition, in electronic equipment, it can also be used for functions such as signal amplification and switch control, providing reliable performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28（mΩ） | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
VBsemi has launched the NTGD3148NT1G MOS tube, with the silkscreen model VB3222. This product is a dual N-channel transistor with excellent performance parameters. The maximum operating voltage is 20V and the maximum operating current is 4.8A. The on-resistance (RDS(ON)) in the on state is 22mΩ @ 4.5V and 28mΩ @ 2.5V respectively. In addition, this product supports a driving voltage range of 12Vgs (±V) and a threshold voltage range of 1.2~2.2V.
Domain and module applications：
NTGD3148NT1G MOS tube is a high-quality product launched by VBsemi to meet the needs of different fields. Its application in power management, battery management, signal amplification and switch control provides efficient and reliable solutions for the design of various modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
