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FDC6561AN-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:**
VBsemi's FDC6561AN-VB is an N-channel field effect transistor suitable for SOT23-6 package. The device has a wide range of applications in power management and switching power supplies.
**Function:**
- **Power switch:** FDC6561AN-VB can be used as a power switch in power management to achieve effective control of the circuit.
- **Current adjustment:** Due to its high current capability, it can be used to adjust the current in the circuit to meet the needs of different applications.
**Precautions for use:**
1. **Temperature control:** During use, pay attention to the operating temperature range of the device and avoid exceeding the specified maximum operating temperature to ensure performance and reliability.
2. **Voltage precautions:** Pay attention to the operating voltage range of the device and avoid exceeding the maximum allowable operating voltage to avoid damaging the device.
3. **Static protection:** Take static protection measures during operation to prevent static electricity from damaging the device.
4. **Application circuit design:** When designing the circuit, please refer to the data sheet and application precautions provided by the manufacturer to ensure that the device is reasonably applied in the design.
FDC6561AN-VB is an excellent N-channel field effect transistor suitable for power management and switching power supply. When using it, users should pay attention to its parameter range, design the circuit reasonably, and take necessary protective measures to ensure the reliability and stability of the device in various application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28（mΩ） | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
**VBsemi FDC6561AN-VB product detailed parameter description and application introduction**
**Parameter description:**
- **Model:** FDC6561AN-VB
- **Silkscreen:** VB3222
- **Brand:** VBsemi
- **Package:** SOT23-6
- **Channel type:** 2 N-Channel channels
- **Operating voltage:** 20V
- **Maximum current:** 4.8A
- **On-resistance:** RDS(ON)=22mΩ@VGS=4.5V, ;
VGS=±12V;
- **Threshold voltage:** Vth=1.2~2.2V
**Parameter description:**
- **Model:** FDC6561AN-VB
- **Silkscreen:** VB3222
- **Brand:** VBsemi
- **Package:** SOT23-6
- **Channel type:** 2 N-Channel channels
- **Operating voltage:** 20V
- **Maximum current:** 4.8A
- **On-resistance:** RDS(ON)=22mΩ@VGS=4.5V, ;
VGS=±12V;
- **Threshold voltage:** Vth=1.2~2.2V
Domain and module applications：
**Main application areas and modules:**
1. **Power management module:** FDC6561AN-VB can be widely used in power management modules for functions such as battery management, power switching and power adjustment. Its low on-resistance and high current capability make it excel in the field of power management.
2. **Switching power module:** Due to the low on-resistance and high threshold voltage of the device, it is suitable for switching devices in switching power modules. This helps to improve the efficiency and performance of the switching power supply.
1. **Power management module:** FDC6561AN-VB can be widely used in power management modules for functions such as battery management, power switching and power adjustment. Its low on-resistance and high current capability make it excel in the field of power management.
2. **Switching power module:** Due to the low on-resistance and high threshold voltage of the device, it is suitable for switching devices in switching power modules. This helps to improve the efficiency and performance of the switching power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
