Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
±20V |
1.7V |
0.3A |
|
3100(mΩ) |
2800(mΩ) |
|
**VBsemi BSS138LT3G-VB**
**Detailed parameter description:**
- Type: N-Channel MOSFET
- Rated voltage (VDS): 60V
- Maximum current (ID): 0.3A
- On-resistance (RDS(ON)): 2800mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage (Vth): 1.6V
- Package: SOT23-3
Domain and module applications：
**Application Areas:**
- Low-power electronics
- Signal switching and processing
- Sensor interface circuits
**Purpose:**
- Provides efficient switching control of small signals
- Energy-saving control in low-power systems
- For small signal switching applications
**Precautions for use:**
1. Please operate according to the recommended operating conditions in the data sheet.
2. Pay attention to the specific value of the threshold voltage and make sure to consider this parameter in the design.
3. Make sure that the current and voltage are within the specified range of the device to avoid device damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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