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BS170FTA-VB Product details
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Application Introduction:
This BS170FTA MOSFET is a low-power N-channel MOSFET suitable for low-power application scenarios. It has a lower rated current and a moderate rated voltage, suitable for various application scenarios that require low-power N-channel MOSFETs, providing stable and reliable current control and low-power conversion functions,
Especially suitable for modules for low-power applications.
This BS170FTA MOSFET is a low-power N-channel MOSFET suitable for low-power application scenarios. It has a lower rated current and a moderate rated voltage, suitable for various application scenarios that require low-power N-channel MOSFETs, providing stable and reliable current control and low-power conversion functions,
Especially suitable for modules for low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Model: BS170FTA
Silkscreen: VB162K
Brand: VBsemi
Parameter description:
- MOSFET type: N-channel
- Rated voltage (VDS): 60V
- Rated current (ID): 0.3A
- On resistance (RDS(ON)): 2800mΩ@10V, 3000mΩ@4.5V
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Silkscreen: VB162K
Brand: VBsemi
Parameter description:
- MOSFET type: N-channel
- Rated voltage (VDS): 60V
- Rated current (ID): 0.3A
- On resistance (RDS(ON)): 2800mΩ@10V, 3000mΩ@4.5V
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Domain and module applications：
This MOSFET can be widely used in modules in the following fields:
- Digital logic module: used for low-power digital logic circuits such as logic level conversion and switch control.
- Low-power switch module: used for low-power modules such as low-power switch circuits and low-power switch control.
- Battery management module: used for low-power battery applications such as low-power battery charge and discharge protection and battery management system.
- Security module: used for switch and control modules in low-power security equipment.
- Digital logic module: used for low-power digital logic circuits such as logic level conversion and switch control.
- Low-power switch module: used for low-power modules such as low-power switch circuits and low-power switch control.
- Battery management module: used for low-power battery applications such as low-power battery charge and discharge protection and battery management system.
- Security module: used for switch and control modules in low-power security equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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