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2N7002ET1G-VB Product details
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The 2N7002ET1G-VB is a low power N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for low power electronic applications.
In summary, the 2N7002ET1G-VB is an N-channel MOSFET suitable for low power electronic applications, especially for signal switching, power switching, circuit protection and logic level conversion. Its low current and low voltage characteristics make it a common component in small electronic devices.
In summary, the 2N7002ET1G-VB is an N-channel MOSFET suitable for low power electronic applications, especially for signal switching, power switching, circuit protection and logic level conversion. Its low current and low voltage characteristics make it a common component in small electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Model: 2N7002ET1G-VB
Silkscreen: VB162K
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Maximum withstand voltage: 60V
- Maximum continuous current: 0.3A
- On resistance (RDS(ON)): 2800mΩ @ 10Vgs, 3000mΩ @ 4.5Vgs
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Silkscreen: VB162K
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Maximum withstand voltage: 60V
- Maximum continuous current: 0.3A
- On resistance (RDS(ON)): 2800mΩ @ 10Vgs, 3000mΩ @ 4.5Vgs
- Threshold voltage (Vth): 1.6V
- Package type: SOT23-3
Domain and module applications：
Here are some of its main application areas:
1. Signal switch: This MOSFET can be used in signal switching circuits, such as in communication equipment, audio amplifiers, and control circuits, to control and manage signal paths.
2. Power switch: In low-power power management modules, 2N7002ET1G-VB can be used for power switches to control the on and off states of the circuit to provide power management functions.
3. Circuit protection: It can also be used for circuit protection, such as in overcurrent protection and over-temperature protection circuits to ensure the safety and stability of the circuit.
4. Logic level conversion: Due to its low threshold voltage, this MOSFET can be used for logic level conversion to convert signals of different levels to compatible levels, such as in microcontrollers and digital circuits.
1. Signal switch: This MOSFET can be used in signal switching circuits, such as in communication equipment, audio amplifiers, and control circuits, to control and manage signal paths.
2. Power switch: In low-power power management modules, 2N7002ET1G-VB can be used for power switches to control the on and off states of the circuit to provide power management functions.
3. Circuit protection: It can also be used for circuit protection, such as in overcurrent protection and over-temperature protection circuits to ensure the safety and stability of the circuit.
4. Logic level conversion: Due to its low threshold voltage, this MOSFET can be used for logic level conversion to convert signals of different levels to compatible levels, such as in microcontrollers and digital circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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