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SI2328DS-T1-GE3-VB Product details

Product introduction:

**Product Introduction:**
SI2328DS-T1-GE3-VB is an N-channel field effect transistor (MOSFET) produced by VBsemi, suitable for a variety of electronic applications. The device has moderate current handling capability and medium voltage characteristics, suitable for circuits requiring medium power and current control.

**Main Features:**
- Moderate current handling capability: Suitable for medium current loads with suitable performance.
- Medium rated voltage: The rated voltage (Vds) is 100V, suitable for medium power supply voltage range.
- Low on-resistance: Has a relatively low static drain-source resistance (RDS(ON)), which helps reduce power consumption and improve efficiency.
- SOT23-3 package: The small SOT23-3 package is suitable for compact circuit design.


It should be noted that the specific application field may vary depending on the product use, circuit design and specification requirements. When selecting and using this model, it is recommended to determine its applicability based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications requiring medium power and current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 100V ±20V 1.5V 2A 260(mΩ) 240(mΩ)
Model: SI2328DS-T1-GE3-VB

**Brand: **VBsemi

**Parameters: **
- Type: N-channel
- Rated voltage (Vds): 100V
- Maximum current (Id): 2A
- Static drain-source resistance (RDS(ON)): 246mΩ @ 10V, 260mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 2V
- Package: SOT23-3

Domain and module applications:

**Application fields:**
SI2328DS-T1-GE3-VB is usually used in the following fields and modules:

1. **Low-power electronic devices:** Due to the moderate current carrying capacity and medium voltage characteristics, it is often used in low-power electronic devices such as portable devices, sensors and small power management.

2. **Power switching device:** Due to the medium voltage and moderate current carrying capacity, it is often used as a power switching device such as switching power supplies, inverters and regulators to improve the efficiency and performance of the circuit.

3. **Signal switch:** In signal switching circuits, such as switching circuits in analog and digital circuits, to achieve signal switching and control.

4. **Power management:** SI2328DS-T1-GE3-VB can be used in power management modules such as battery charging, power selection and low-power standby mode.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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