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SI2392DS-T1-GE3-VB Product details
Back to previous pageProduct introduction：
SI2392DS-T1-GE3-VB is a VBsemi brand N-Channel trench field effect transistor, using SOT23-3 package.
Application introduction:
SI2392DS-T1-GE3-VB is suitable for various electronic devices and modules, especially in scenarios where N-Channel trench field effect transistors are required.
SI2392DS-T1-GE3-VB can play an important role in various electronic modules that require N-Channel field effect transistors, improving system performance and efficiency.
Application introduction:
SI2392DS-T1-GE3-VB is suitable for various electronic devices and modules, especially in scenarios where N-Channel trench field effect transistors are required.
SI2392DS-T1-GE3-VB can play an important role in various electronic modules that require N-Channel field effect transistors, improving system performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.8V | 4.3A | 141(mΩ) | 100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.8V | 4.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.8V | 4.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
- Voltage (Vds): 100V
- Current (Id): 4.3A
- On-resistance (RDS(ON)): 120mΩ @ VGS=10V,
- VGS=±20V
- Threshold voltage (Vth): 1.2~2.8V
- Current (Id): 4.3A
- On-resistance (RDS(ON)): 120mΩ @ VGS=10V,
- VGS=±20V
- Threshold voltage (Vth): 1.2~2.8V
Domain and module applications：
1. **Power Management Module:** Due to its high voltage and current carrying capacity, SI2392DS-T1-GE3-VB is very suitable for use in power management modules to achieve efficient power control and management.
2. **Power Inverter:** In the power inverter, SI2392DS-T1-GE3-VB can be used to control the current and voltage during the power inversion process to improve the inverter efficiency.
3. **Current Control Module:** Due to its low on-resistance and adjustable threshold voltage, SI2392DS-T1-GE3-VB can be used in the current control module to achieve precise control of the current.
4. **LED Driver:** In the field of LED lighting, SI2392DS-T1-GE3-VB can be used in LED driver modules to achieve efficient control and dimming of LEDs.
5. **Battery protection module:** Due to its high voltage characteristics, SI2392DS-T1-GE3-VB is suitable for battery protection module to ensure the safe operation of the battery under different working conditions.
2. **Power Inverter:** In the power inverter, SI2392DS-T1-GE3-VB can be used to control the current and voltage during the power inversion process to improve the inverter efficiency.
3. **Current Control Module:** Due to its low on-resistance and adjustable threshold voltage, SI2392DS-T1-GE3-VB can be used in the current control module to achieve precise control of the current.
4. **LED Driver:** In the field of LED lighting, SI2392DS-T1-GE3-VB can be used in LED driver modules to achieve efficient control and dimming of LEDs.
5. **Battery protection module:** Due to its high voltage characteristics, SI2392DS-T1-GE3-VB is suitable for battery protection module to ensure the safe operation of the battery under different working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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