**Product model:** TSM2312CX-RF-VB

**Silk screen:** VB1240

**Brand:** VBsemi

**Parameters:**
- Package: SOT23-3
- Channel type: N—Channel
- Maximum voltage: 20V
- Maximum current: 6A
- On-resistance: RDS(ON) = 24mΩ @ VGS=4.5V, VGS=8V
- Threshold voltage: Vth = 0.45~1V

**Application introduction:**
TSM2312CX-RF-VB is an N—Channel field effect transistor in SOT23-3 package. It has high current carrying capacity and low on-resistance, suitable for a variety of low-voltage drive applications.

**Main application areas:**
1. **Power module:** Used for power switches to provide reliable switch control.
2. **Power management module:** Suitable for various power management circuits to achieve effective power control.
3. **Drive module:** As part of the driver, it is used to provide stable current and voltage output.

**Function:**
- Suitable for switch control under low voltage conditions, providing reliable N-Channel trench field effect transistor.
- Used in power modules, power management modules and drive modules to provide effective power control and current drive.

**Notes:**
1. Use strictly in accordance with the electrical characteristics and working conditions specified in the data sheet.
2. The package type is SOT23-3 and is correctly installed on the circuit board.
3. Ensure the connection is oriented correctly to prevent reverse connection.
4. Pay attention to the threshold voltage range to ensure operation under the correct voltage conditions.