AP2312GN-VB is a VBsemi brand N-Channel trench MOSFET, using SOT23-3 package. The main parameters include operating voltage 20V, current carrying capacity 6A, on-resistance RDS(ON)=24mΩ (at VGS=4.5V, VGS=8V), and threshold voltage Vth range of 0.45~1V.
This MOSFET is suitable for high-performance switching and amplification circuit design. In the fields of power management, battery management, DC-DC converters, etc., AP2312GN-VB can be used to improve system efficiency and performance and reduce power consumption. Its SOT23-3 package is suitable for small electronic devices and circuit boards, with the characteristics of small size and excellent performance.
In power modules, battery management modules and power control modules, AP2312GN-VB can be used to achieve high-efficiency power switching and signal amplification, and is widely used. Its reliability and high performance make it one of the common components in electronic devices.
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