VBsemi CPH3308-TL-E-VB is a P-Channel trench MOSFET. The following are detailed parameter descriptions and application profiles:

- **Voltage specification: ** -30V
- **Current specification: ** -5.6A
- **On-resistance (RDS(ON)): ** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth): ** -1V

**Package: ** SOT23-3

**Application profile: **
CPH3308-TL-E-VB is a P-Channel MOSFET suitable for low voltage applications. Its low on-resistance and high current characteristics make it widely used in a variety of electronic devices.

**Main features: **
1. **Low on-resistance: ** RDS(ON) is only 47mΩ, which effectively reduces the power consumption when turned on.
2. **Wide voltage range:** The voltage specification of -30V makes it suitable for various low-voltage circuits.
3. **High current capability:** The current specification of -5.6A enables it to drive high-power loads.

**Application areas:**
1. **Power management:** Used in power management modules such as battery management and DC-DC converters.
2. **Motor drive:** Can be used in the drive circuit of small motors.
3. **LED lighting:** Plays the role of switching and regulation in the LED lighting control circuit.

**Module application:**
1. **Power module:** Can be integrated into various power modules to improve efficiency and performance.
2. **Motor drive module:** Drive control module for small motors.
3. **LED control module:** Used for dimming and switching control in LED lighting systems.

Overall, the CPH3308-TL-E-VB is suitable for low-voltage, high-current applications that require P-Channel MOSFETs, such as power management, motor drive, and LED lighting.