Model: CPH3314-TL-E-VB
Silk screen: VB2355
Brand: VBsemi
Package: SOT23-3

**Detailed parameter description:**
- Polarity: P—Channel
- Maximum drain voltage (Vds): -30V
- Maximum drain current (Id): -5.6A
- On-state leakage resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Application introduction:**
CPH3314-TL-E-VB is a P—Channel field effect transistor in SOT23-3 package. The device has a maximum drain current capability of negative 5.6A at a maximum drain voltage of negative 30V and exhibits a low on-state drain resistance of 47mΩ at different gate-source voltages. Its threshold voltage is negative 1V.

**Application areas:**
Due to the performance parameters of CPH3314-TL-E-VB, it may be widely used in the following fields:

1. **Power management module:** Suitable for power switching circuits such as switching power supplies, power adapters and battery management.

2. **Current control module:** Can be used for current regulators and current limiters to ensure current stability and controllability.

3. **Signal amplification module:** Due to its P-Channel polarity, it is suitable for signal amplification circuits that require P-Channel MOSFETs.

4. **Power inverter:** In power inverters that require inverter functions, CPH3314-TL-E-VB can be used to control the switching and inversion of power supplies.

These application scenarios are only examples. The specific use depends on the requirements of system design and the matching of performance parameters.