**2315N-VB**

- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Package:** SOT23-3

**Parameters:**
- **Channel type:** P—Channel
- **Maximum drain voltage (VDS):** -30V
- **Maximum drain current (ID):** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1V

**Application introduction:**
2315N-VB is a P-Channel trench MOSFET with excellent characteristics and is suitable for a variety of application scenarios. The following is a detailed parameter description and application introduction:

1. **Power module:** Suitable for designing efficient power modules and providing stable power output.

2. **Battery management:** Used in battery protection circuits to manage battery charging and discharging, improve battery life and safety.

3. **Switching power supply:** Can be used for switching power supplies and switching circuits to achieve power conversion and power energy control.

4. **Lighting control:** Used in LED lighting systems to achieve brightness adjustment and power control.

5. **Current control module:** Suitable for circuit module design that requires precise current control.

6. **Power switch:** As a power switch element, it is used for efficient control of power input and output.

**Note:** In specific design, please carefully select working conditions and external components according to the application scenario and circuit parameters to ensure that they meet the design requirements to achieve optimal performance and stability.