- **Silkscreen:** VB2355 - **Brand:** VBsemi - **Parameters:** - Package type: SOT23-3 - Channel type: P—Channel - Operating voltage: -30V - Continuous drain current: -5.6A - On-resistance: 47mΩ @ VGS=10V, VGS=20V - Threshold voltage: Vth=-1V - **Application introduction:** UT2309G-AE3-R-VB is a high-performance P-Channel trench MOSFET designed for power management and switching power supply applications. Its low on-resistance and high drain current make it excellent in various power systems.
- **Application fields:** 1. **Power switch:** Suitable for various power switch circuits. 2. **Voltage regulator:** Provides efficient power control to ensure stable output voltage. 3. **DC-DC converter:** Used to achieve high-efficiency conversion between different voltages. 4. **Power management system:** Provides reliable solutions for power management.
- **Package:** SOT23-3
UT2309G-AE3-R-VB is widely used in power switches, voltage regulators, DC-DC converters and power management systems, providing efficient and reliable solutions for various application scenarios.
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