Product model: UT2352G-AE3-R-VB

Silk screen: VB2355

Brand: VBsemi

**Parameters:**
- Package: SOT23-3
- Type: P—Channel
- Rated voltage: -30V
- Rated current: -5.6A
- Static on-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

**Package:**
- Package type: SOT23-3

**Detailed parameter description and application introduction:**
UT2352G-AE3-R-VB is a P—Channel field effect transistor in SOT23-3 package. Its main parameters include rated voltage of -30V, rated current of -5.6A, static on-resistance of 47mΩ (at VGS=10V, VGS=20V), and threshold voltage of -1V.

**Application fields:**
This product is suitable for a variety of electronic devices and modules that require P-Channel field effect transistors. Due to its superior performance under low voltage and low current conditions, it is particularly suitable for applications that require high efficiency and energy saving.

**Typical application modules:**
1. **Power module:** Since this transistor has a low on-resistance and moderate current capacity, it can be used in power switching circuits to improve the efficiency of switching power supplies.
2. **Signal amplification module:** Suitable for some signal amplification circuits. Due to its P-Channel channel characteristics, it can be used for signal amplification and switching in specific designs.
3. **Low-power devices:** Due to its low threshold voltage and low on-resistance, it is suitable for some low-power devices with high power requirements.

Please note that the specific application and module selection should be based on the requirements and specifications of the circuit design. In integrated circuit design, ensure that product specifications are met and device performance requirements are met.