Model: SSM3J321T-VB
Silkscreen: VB2355
Brand: VBsemi
Package: SOT23-3

Parameters:
- Channel type: P-Channel
- Rated voltage: -30V
- Rated current: -5.6A
- On resistance: 47mΩ @ VGS=10V, VGS=20V
- Gate-source voltage threshold: Vth=-1V

Application introduction:
SSM3J321T-VB is a P-Channel trench MOSFET suitable for a variety of circuit designs and application scenarios. Its main features include low voltage threshold, higher rated current and low on resistance, which make it play an important role in various electronic devices.

Detailed parameter description:
1. **Channel type**: P-Channel MOSFET, suitable for circuit designs that require P-type transmission conductors.
2. **Rated voltage**: -30V, which can meet the requirements of electronic devices with power supply voltage.
3. **Rated current**: -5.6A, with high current carrying capacity, suitable for scenarios that need to handle large currents.
4. **On-resistance**: 47mΩ @ VGS=10V, VGS=20V, low on-resistance helps reduce power loss and improve efficiency.
5. **Gate-source voltage threshold**: Vth=-1V, low voltage threshold makes it perform well in low-voltage environments.

Application areas:
SSM3J321T-VB is suitable for a variety of fields, including but not limited to:
- **Power management module**: Due to its low voltage threshold and high current carrying capacity, it can be used for power switching and regulation circuits.
- **Power tools**: Can meet the needs of power tools for high current and withstand voltage.
- **Automotive electronics**: Can be used for power switching and current control in automotive electronic systems.
- **LED lighting**: Suitable for LED drive circuits, providing efficient current control.

Overall, the SSM3J321T-VB is an excellent MOSFET suitable for electronic devices in multiple fields, and its superior characteristics make it an ideal choice for circuit design.