Model: SSM3J331R-VB

Silk screen: VB2355

Brand: VBsemi

Parameters:
- Package: SOT23-3
- Channel type: P—Channel
- Rated voltage: -30V
- Maximum current: -5.6A
- Static on-resistance (RDS(ON)): 47mΩ (at VGS=10V, VGS=20V)
- Threshold voltage (Vth): -1V

Package: SOT23-3

**Detailed parameter description:**
1. **Channel type:** P-Channel channel, suitable for P-Channel MOSFET, used for the part responsible for current flowing through the channel.
2. **Rated voltage:** -30V, which indicates the maximum voltage of the MOSFET under normal working conditions.
3. **Maximum current:** -5.6A, which indicates the maximum current that the MOSFET can withstand.
4. **Static on-state resistance (RDS(ON)):** 47mΩ, which indicates the resistance of the MOSFET in the on state.
5. **Threshold voltage (Vth):** -1V, which indicates the voltage threshold of the MOSFET from off to on.

**Application introduction:**
SSM3J331R-VB is a P-Channel MOSFET suitable for circuits that need to be responsible for load switching. Its low static on-state resistance and high rated current make it particularly suitable for power switching applications.

**Application areas:**
1. **Power management:** It can be used in power switching modules, such as DC-DC Converters.
2. **Current control:** It is suitable for circuits that require current control, such as current sources.
3. **Motor drive:** Can be used as a power switching device for the motor in the motor control circuit.

**Module application:**
1. **Power module:** Used in DC power switch module to ensure effective power management.
2. **Drive module:** Can be used for drive module to control current and power transfer.
3. **Switch module:** Suitable for various switching circuits such as switching power supplies, inverters, etc.

Overall, the SSM3J331R-VB is a versatile P-Channel MOSFET suitable for a variety of power electronics applications with low on-resistance and high current handling capability.